3Z110TPA2 datasheet, PDF - EEWORLD Datasheet

3Z110TPA2: DescriptionDIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor; CategoryDiscrete semiconductor diode; File Size77KB，3 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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3Z110TPA2 Overview

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	O-PALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum breakdown voltage	121 V
Minimum breakdown voltage	99 V
Breakdown voltage nominal value	110 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	1500 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	3 W
Certification status	Not Qualified
Maximum reverse current	10 µA
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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