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IRKU250-10N

Description
Silicon Controlled Rectifier, 555A I(T)RMS, 250000mA I(T), 1000V V(DRM), 1000V V(RRM), 2 Element, POWER, MAGN-A-PAK-7
CategoryAnalog mixed-signal IC    Trigger device   
File Size485KB,14 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRKU250-10N Overview

Silicon Controlled Rectifier, 555A I(T)RMS, 250000mA I(T), 1000V V(DRM), 1000V V(RRM), 2 Element, POWER, MAGN-A-PAK-7

IRKU250-10N Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PXFM-X7
Contacts7
Reach Compliance Codeunknown
Shell connectionISOLATED
Nominal circuit commutation break time150 µs
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Quick connection description2G-2GR
Description of screw terminals2A-CK
Maximum holding current500 mA
JESD-30 codeR-PXFM-X7
Maximum leakage current50 mA
Humidity sensitivity level1
On-state non-repetitive peak current8900 A
Number of components2
Number of terminals7
Maximum on-state current250000 A
Maximum operating temperature130 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum rms on-state current555 A
Maximum repetitive peak off-state leakage current50000 µA
Off-state repetitive peak voltage1000 V
Repeated peak reverse voltage1000 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1

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