IXGH12N100U1 datasheet, PDF - EEWORLD Datasheet

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IXGH12N100U1: Description20 A, 1000 V, N-CHANNEL IGBT, TO-247AD; Categorysemiconductor Discrete semiconductor; File Size119KB，5 Pages; ManufacturerIXYS ( Littelfuse ); Websitehttp://www.ixys.com/

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IXGH12N100U1 Overview

20 A, 1000 V, N-CHANNEL IGBT, TO-247AD

IXGH12N100U1 Parametric

Parameter Name	Attribute value
Number of terminals	3
Rated off time	850 ns
Maximum collector current	20 A
Maximum Collector-Emitter Voltage	1000 V
Processing package description	TO-247AD, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	NOT SPECIFIED
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Shell connection	COLLECTOR
Number of components	1
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Channel type	N-CHANNEL
Transistor type	INSULATED GATE BIPOLAR
Rated on time	100 ns

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Low V

CE(sat)

IGBT with Diode

High Speed IGBT with Diode

Combi Pack

CES

IXGH 12N100U1

IXGH 12N100AU1

C25

CE(sat)

1000 V 24 A 3.5 V

1000 V 24 A 4.0 V

Symbol

CES

CGR

GES

GEM

C25

C90

SSOA

(RBSOA)

stg

Weight

Test Conditions

= 25°C to 150°C

= 25°C to 150°C; R

= 1 MW

Continuous

Transient

= 25°C

= 90°C

= 25°C, 1 ms

= 15 V, T

= 125°C, R

= 150

Clamped inductive load, L = 300

= 25°C

Maximum Ratings

1000

±20

±30

= 24

@ 0.8 V

CES

100

-55 ... +150

150

-55 ... +150

°C

TO-247AD

C (TAB)

G = Gate

E = Emitter

= Collector

TAB = Collector

Mounting torque with screw M3

1.13/10 Nm/lb.in.

300

°C

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Symbol

Test Conditions

= 25°C, unless otherwise specified)

CES

= 3 mA, V

= 0 V

CES

temperature coefficient

GE(th)

= 500

mA,

= V

GE(th)

temperature coefficient

CES

= 0.8, V

CES

= 0 V

GES

CE(sat)

= 0 V, V

±20

= I

CE90

, V

= 15

Min.

1000

Characteristic Values

Typ.

Max.

0.072

%/K

5.5

-0.192

%/K

300

±100

Features

• International standard packages

JEDEC TO-247

• IGBT with antiparallel FRED in one

package

• HDMOS

process

• Low V

CE(sat)

- for minimum on-state conduction

losses

• MOS Gate turn-on

- drive simplicity

• Fast Recovery Expitaxial Diode (FRED)

- soft recovery with low I

Applications

• DC choppers

• AC motor speed control

• DC servo and robot drives

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode

power supplies

Advantages

• Easy to mount with one screw

• Reduces assembly time and cost

• Space savings (two devices in one

package)

2.5

= 25°C

= 125°C

12N100U1

12N100AU1

3.5

4.0

IXYS reserves the right to change limits, test conditions, and dimensions.

95596C (7/00)

1-5

IXGH12N100U1 Related Products

	IXGH12N100U1	IXGH12N100AU1
Description	20 A, 1000 V, N-CHANNEL IGBT, TO-247AD	20 A, 1000 V, N-CHANNEL IGBT, TO-247AD
Number of terminals	3	3
Rated off time	850 ns	850 ns
Maximum collector current	20 A	20 A
Maximum Collector-Emitter Voltage	1000 V	1000 V
Processing package description	TO-247AD, 3 PIN	TO-247AD, 3 PIN
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
state	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT
Terminal form	THROUGH-HOLE	THROUGH-HOLE
terminal coating	NOT SPECIFIED	NOT SPECIFIED
Terminal location	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Shell connection	COLLECTOR	COLLECTOR
Number of components	1	1
transistor applications	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON
Channel type	N-CHANNEL	N-CHANNEL
Transistor type	INSULATED GATE BIPOLAR	INSULATED GATE BIPOLAR
Rated on time	100 ns	100 ns

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