Low V
CE(sat)
IGBT with Diode
High Speed IGBT with Diode
Combi Pack
V
CES
IXGH 12N100U1
IXGH 12N100AU1
I
C25
V
CE(sat)
1000 V 24 A 3.5 V
1000 V 24 A 4.0 V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 150
W
Clamped inductive load, L = 300
mH
T
C
= 25°C
Maximum Ratings
1000
1000
±20
±30
24
12
48
I
CM
= 24
@ 0.8 V
CES
100
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
V
V
V
V
TO-247AD
G
C (TAB)
C
E
A
A
A
A
G = Gate
E = Emitter
C
= Collector
TAB = Collector
Mounting torque with screw M3
1.13/10 Nm/lb.in.
6
300
g
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
CES
I
C
= 3 mA, V
GE
= 0 V
BV
CES
temperature coefficient
V
GE(th)
I
C
= 500
mA,
V
GE
= V
GE
V
GE(th)
temperature coefficient
I
CES
V
CE
= 0.8, V
CES
V
GE
= 0 V
I
GES
V
CE(sat)
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
CE90
, V
GE
= 15
Min.
1000
Characteristic Values
Typ.
Max.
V
0.072
%/K
5.5
-0.192
V
%/K
300
5
±100
mA
mA
nA
V
V
Features
• International standard packages
JEDEC TO-247
• IGBT with antiparallel FRED in one
package
• HDMOS
TM
process
• Low V
CE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
• DC choppers
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with one screw
• Reduces assembly time and cost
• Space savings (two devices in one
package)
2.5
T
J
= 25°C
T
J
= 125°C
12N100U1
12N100AU1
3.5
4.0
IXYS reserves the right to change limits, test conditions, and dimensions.
95596C (7/00)
© 2000 IXYS All rights reserved
1-5
IXGH12N100U1
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
(on)
t
d(off)
t
fi
E
off
R
thJC
R
thCK
0.25
Inductive load, T
J
= 125°C
I
C
= I
C90
, V
GE
= 15 V, L = 300
mH
12N100U1
12N100AU1
12N100U1
12N100AU1
V
CE
= 800 V, R
G
= R
off
= 120
W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 25°C
I
C
= I
C90
, V
GE
= 15 V, L = 300
mH
12N100U1
12N100AU1
12N100U1
12N100AU1
V
CE
= 800 V, R
G
= R
off
= 120
W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
V
CE
= 25 V, V
GE
= 0 V, f = 1MHz
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
£
300
ms,
duty cycle
£
2 %
750
120
30
65
8
24
100
200
850 1000
800 1000
500
2.5
1.5
100
200
1.1
900
1250
950
3.5
2.2
3.0
700
90
20
45
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
mJ
mJ
ns
ns
mJ
ns
ns
ns
mJ
mJ
1.25 K/W
K/W
Characteristic Values
Min. Typ.
Max.
6
10
S
IXGH12N100AU1
TO-247 AD (IXGH) Outline
Dim. Millimeter
Min. Max.
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32 5.49
5.4
6.2
1.65 2.13
-
4.5
1.0
1.4
10.8 11.0
4.7
0.4
5.3
0.8
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
1.5 2.49
Reverse Diode (FRED)
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions
V
F
I
RM
t
rr
R
thJC
I
F
=8A, V
GE
= 0 V,
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 100 A/ms
V
R
= 540 V
I
F
= 1 A, -di/dt = 50 A/ms, V
R
= 30 V
Characteristic Values
Min.
Typ.
Max.
2.75
V
T
J
= 125°C
T
J
= 25°C
6.5
120
50
60
A
ns
ns
2.5 K/W
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-5
IXGH12N100U1
50
40
V
GE
= 15V
T
J
= 25°C
13V
11V
IXGH12N100AU1
100
T
J
= 25°C
V
GE
= 15V
80
I
C
- Amperes
I
C
- Amperes
9V
13V
30
20
7V
60
11V
40
9V
10
0
0
2
4
6
8
10
20
7V
0
0
4
8
12
16
20
V
CE
- Volts
V
CE
- Volts
Figure 1. Saturation Voltage Characteristics
Figure 2. Extended Output Characteristics
50
T
J
= 125°C
1.6
V
GE
= 15V
13V
11V
V
GE
= 15V
I
C
= 24A
V
CE (sat)
- Normalized
40
1.4
1.2
I
C
= 12A
I
C
- Amperes
30
9V
20
7V
1.0
0.8
I
C
= 6A
10
0
0
2
4
6
8
10
0.6
25
50
75
100
125
150
V
CE
- Volts
T
J
- Degrees C
Figure 3. Saturation Voltage Characteristics
Figure 4. Temperature Dependence of V
CE(sat)
50
V
CE
= 10V
1000
C
iss
f = 1Mhz
40
30
T
J
= 125°C
Capacitance - pF
T
J
= 25°C
I
C
- Amperes
C
oss
100
20
10
0
2
4
6
8
10
12
C
rss
10
0
5
10
15
20
25
30
35
40
V
GE
- Volts
V
CE
-Volts
Figure 5. Admittance Curves
Figure 6. Capacitance Curves
© 2000 IXYS All rights reserved
3-5
IXGH12N100U1
1200
T
J
= 125°C
IXGH12N100AU1
5
5
1000
t
fi
- nanoseconds
t
fi
- nanoseconds
1100
1000
E
(OFF)
900
800
0
5
10
15
Figure 7. Dependence of tfi and E
OFF
on I
C
.
100
15
12
I
C
= 30A
V
CE
= 150V
I
C
- Amperes
V
GE
- Volts
9
6
3
0
0
15
30
45
60
75
dV/dt < 5V/ns
1
0.1
0
200
400
600
800
1000
Q
g
- nanocoulombs
V
CE
- Volts
Figure 9. Gate Charge
Figure 10. Turn-off Safe Operating Area
1
D=0.5
D=0.2
D=0.1
Z
thJC
(K/W)
0.1
D=0.05
D=0.02
D=0.01
D = Duty Cycle
0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
Figure 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
t
fi
R
G
= 120
4
800
t
fi
T
J
= 125°C
I
C
= 12A
4
E
(OFF)
- milliJoules
E
(OFF)
- millijoules
600
3
3
400
E
(OFF)
2
2
200
1
1
20
0
0
30
60
90
120
0
150
I
C
- Amperes
R
G
- Ohms
Figure 8. Dependence of tfi and E
OFF
on R
G
.
24
T
J
= 125°C
10
R
G
= 4.7
1
4-5
IXGH12N100U1
IXGH12N100AU1
Fig. 12. Forward current versus
voltage drop.
Fig. 13. Recovery charge versus -di
F
/dt.
Fig. 14. Peak reverse current versus
-di
F
/dt.
Fig. 15. Dynamic parameters versus
junction temperature.
Fig. 16. Reverse recovery time .
versus -di
F
/dt
Fig. 17. Forward voltage recovery and
time versus -di
F
/dt.
Fig. 18. Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
5-5
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