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BY550-100

Description
Rectifier Diode, 1 Element, 5A, 100V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size52KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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BY550-100 Overview

Rectifier Diode, 1 Element, 5A, 100V V(RRM),

BY550-100 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current300 A
Number of components1
Maximum operating temperature150 °C
Maximum output current5 A
Maximum repetitive peak reverse voltage100 V
surface mountNO
Base Number Matches1
BL
FEATURES
Low leakage
GALAXY ELECTRICAL
BY550-50 --- BY550-1000
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 5.0 A
PLASTIC SILICON RECTIFIER
Low cost
Diffused junction
Low forward voltage drop
High current capability
Easily cleaned witn Freon,Alcohol,lsopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 27
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces, 1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BY
550-50
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
BY
BY
BY
BY
BY
BY
UNITS
550-100 550-200 550-400 550-600 550-800 550-1000
100
70
100
200
140
200
400
280
400
5.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
300.0
A
Maximum instantaneous forw ard voltage
@
5.0
A
Maximum reverse current
@T
A
=25
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
1.1
10.0
100.0
80
15
- 55 ---- + 150
- 55 ---- + 150
V
A
pF
/W
at rated DC blocking voltage @T
A
=100
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
Operating junction temperature range
Storage temperature range
2. Thermal resistance f rom junction to ambient.
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
www.galaxycn.com
Document Number 0260031
BL
GALAXY ELECTRICAL
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