BDY58R datasheet, PDF - EEWORLD Datasheet

BDY58R: DescriptionPower Bipolar Transistor, 25A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin; CategoryDiscrete semiconductor The transistor; File Size149KB，4 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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BDY58R Overview

Power Bipolar Transistor, 25A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	25 A
Collector-emitter maximum voltage	160 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	175 W
Maximum power dissipation(Abs)	175 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	48 MHz
Maximum off time (toff)	2000 ns
Maximum opening time (tons)	1000 ns
VCEsat-Max	1.4 V
Base Number Matches	1

	BDY58R
Description	Power Bipolar Transistor, 25A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	25 A
Collector-emitter maximum voltage	160 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	175 W
Maximum power dissipation(Abs)	175 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	48 MHz
Maximum off time (toff)	2000 ns
Maximum opening time (tons)	1000 ns
VCEsat-Max	1.4 V
Base Number Matches	1

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