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HER206G

Description
2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size120KB,2 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
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HER206G Overview

2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15

HER201G THRU HER208G
HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER
Reverse Voltage -
50 to 1000 Volts
Forward Current -
2.0 Amperes
Features
Low power loss, high efficiency
Low leakage
Low forward voltage drop
High current capability
High speed switching
High current surge
High reliability
Mechanical Data
Case:
Molded plastic
Epoxy:
UL94V-0 rate flame retardant
Lead:
MIL-STD-202E method 208C guaranteed
Mounting Position:
Any
Weight:
0.014 ounce, 0.395 gram
DIM ENSIONS
DIM
A
B
C
D
inches
Min.
0.228
0.102
0.028
1.000
Max.
0.299
0.142
0.034
-
Min.
5.8
2.6
0.71
25.40
mm
Max.
7.6
3.6
0.86
-
Note
Maximum Ratings and Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
HER
201G
HER
202G
HER
203G
HER
204G
HER
205G
HER
206G
HER
207G
HER
208G
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=50
Peak forward surge current,
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method)
Maximum instantaneous forward voltage at 2.0A DC
Maximum full load reverse current average, full cycle
0.375" (9.5mm) lead length at T
L
=55
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R(AV)
I
R
T
rr
C
J
T
J
, T
STG
50
35
50
100
70
100
200
140
200
300
210
300
2.0
60.0
400
280
400
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
1.0
1.3
100.0
5.0
50.0
30
-65 to +150
1.5
1.7
Volts
A
A
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Operating and storage temperature range
Notes:
(1) Test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
75.0
20
nS
F
1

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Description 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 300 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15

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