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IRF15210

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size143KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRF15210 Overview

Transistor,

IRF15210 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)23 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)63 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
PD - 9.1404A
PRELIMINARY
l
l
l
l
l
l
IRFI5210
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
…
Sink to Lead Creepage Dist. = 4.8mm
P-Channel
Fully Avalanche Rated
V
DSS
= -100V
R
DS(on)
= 0.06Ω
G
I
D
= -23A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
†
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
-23
-16
-140
63
0.42
± 20
690
-21
6.3
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
2.4
65
Units
°C/W
3/16/98

IRF15210 Related Products

IRF15210
Description Transistor,
Is it Rohs certified? incompatible
Maker International Rectifier ( Infineon )
Reach Compliance Code unknown
Configuration Single
Maximum drain current (Abs) (ID) 23 A
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0
Operating mode ENHANCEMENT MODE
Maximum operating temperature 175 °C
Polarity/channel type P-CHANNEL
Maximum power dissipation(Abs) 63 W
surface mount NO
Terminal surface Tin/Lead (Sn/Pb)
Base Number Matches 1
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