Chip Silicon Rectifier
HFM301 THRU HFM307
Ultra fast recovery type
Formosa MS
SMC
0.276(7.0)
0.260(6.6)
0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.032(0.8) Typ.
0.040(1.0) Typ.
0.152(3.8)
0.144(3.6)
0.189(4.8)
0.173(4.4)
0.244(6.2)
0.228(5.8)
0.087(2.2)
0.071(1.8)
Mechanical data
Case : Molded plastic, JEDEC DO-214AB
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting P
osition : Any
Weight : 0.00585 ounce, 0.195 gram
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
CONDITIONS
Ambient temperature = 55
o
C
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
3.0
100
10.0
300
UNIT
A
A
uA
uA
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
I
R
Rq
JA
C
J
T
STG
-55
15
70
V
R
= V
RRM
T
A
= 100 C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
H31
H32
H33
H34
H35
H36
H37
V
RRM
(V)
*1
V
RMS
(V)
35
70
140
210
280
420
560
*2
V
R
*3
V
F
*4
T
RR
*5
Operating
temperature
(
o
C)
(V)
50
100
200
300
400
600
800
(V)
(nS)
HFM301
HFM302
HFM303
HFM304
HFM305
HFM306
HFM307
50
100
200
300
400
600
800
1.0
50
-55 to +150
1.3
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
1.7
70
*5 Reverse recovery time
RATING AND CHARACTERISTIC CURVES (HFM301 THRU HFM307)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
10
AVERAGE FORWARD CURRENT,(A)
1~
HF
M3
0
3
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
3.6
3.0
2.4
1.8
1.2
0.6
0
0
20
40
60
80
100
120
140
160
180
200
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
5
4~
HF
M3
0
INSTANTANEOUS FORWARD CURRENT,(A)
HF
M3
0
HF
M3
0
1.0
.1
Tj=25 C
Pulse Width 300us
1% Duty Cycle
H
FM
30
6~
H
FM
30
7
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
100
.01
.001
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
80
FORWARD VOLT
AGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
60
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
40
20
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
175
trr
+0.5A
|
|
|
|
|
|
|
|
JUNCTION CAPACITANCE,(pF)
150
125
100
75
50
25
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)