HGT1S20N35G3VLS datasheet, PDF

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HGT1S20N35G3VLS: Description20 A, 320 V, N-CHANNEL IGBT, TO-263AB; CategoryDiscrete semiconductor The transistor; File Size204KB，8 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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HGT1S20N35G3VLS Overview

20 A, 320 V, N-CHANNEL IGBT, TO-263AB

HGT1S20N35G3VLS Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
Parts packaging code	D2PAK
package instruction	TO-263AB, 3 PIN
Contacts	4
Reach Compliance Code	_compli
Shell connection	COLLECTOR
Maximum collector current (IC)	20 A
Collector-emitter maximum voltage	320 V
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Gate emitter threshold voltage maximum	2.3 V
Gate-emitter maximum voltage	12 V
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	150 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AUTOMOTIVE IGNITION
Transistor component materials	SILICON
Nominal off time (toff)	15000 ns

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HGTP20N35G3VL,

HGT1S20N35G3VL,

HGT1S20N35G3VLS

December 2001

20A, 350V N-Channel,

Logic Level, Voltage Clamping IGBTs

Packages

JEDEC TO-220AB

EMITTER

COLLECTOR

GATE

COLLECTOR

(FLANGE)

Features

• Logic Level Gate Drive

• Internal Voltage Clamp

• ESD Gate Protection

• T

= 175

• Ignition Energy Capable

Description

This N-Channel IGBT is a MOS gated, logic level device

which is intended to be used as an ignition coil driver in auto-

motive ignition circuits. Unique features include an active

voltage clamp between the collector and the gate which pro-

vides Self Clamped Inductive Switching (SCIS) capability in

ignition circuits. Internal diodes provide ESD protection for

the logic level gate. Both a series resistor and a shunt resis-

tor are provided in the gate circuit.

PACKAGING AVAILABILITY

PART NUMBER

HGTP20N35G3VL

HGT1S20N35G3VL

HGT1S20N35G3VLS

PACKAGE

T0-220AB

T0-262AA

T0-263AB

BRAND

20N35GVL

COLLECTOR

(FLANGE)

JEDEC TO-262AA

EMITTER

COLLECTOR

GATE

JEDEC TO-263AB

COLLECTOR

(FLANGE)

GATE

EMITTER

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

COLLECTOR

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-263AB variant in the tape and reel, i.e.,

HGT1S20N35G3VLS9A.

The development type number for this device is TA49076.

GATE

EMITTER

Absolute Maximum Ratings

= +25

C, Unless Otherwise Specified

HGTP20N35G3VL

HGT1S20N35G3VL

HGT1S20N35G3VLS

375

±10

775

150

1.0

-40 to +175

260

Collector-Emitter Bkdn Voltage At 10mA, R

= 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BV

CER

Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

ECS

Collector Current Continuous At V

= 5.0V, T

= +25

C, Figure 7 . . . . . . . . . . . . . I

C25

At V

= 5.0V, T

= +100

C . . . . . . . . . . . . . . . . . . . . I

C100

Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GES

Inductive Switching Current At L = 2.3mH, T

= +25

C . . . . . . . . . . . . . . . . . . . . . . I

SCIS

At L = 2.3mH, T

= +175 C . . . . . . . . . . . . . . . . . . . . . . I

SCIS

Collector to Emitter Avalanche Energy At L = 2.3mH, T

= +25

C . . . . . . . . . . . . . . E

Power Dissipation Total At T

= +25

C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Power Dissipation Derating T

> +25

C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T

, T

STG

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD

NOTE: May be exceeded if I

GEM

is limited to 10mA.

UNITS

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B

HGT1S20N35G3VLS Related Products

	HGT1S20N35G3VLS	HGT1S20N35G3VL	HGTP20N35G3VL
Description	20 A, 320 V, N-CHANNEL IGBT, TO-263AB	20 A, N-CHANNEL IGBT, TO-262AA	20 A, 320 V, N-CHANNEL IGBT, TO-220AB
Is it Rohs certified?	conform to	incompatible	conform to
Maker	Fairchild	Fairchild	Fairchild
Parts packaging code	D2PAK	TO-262AA	TO-220AB
package instruction	TO-263AB, 3 PIN	TO-262AA, 3 PIN	TO-220AB, 3 PIN
Contacts	4	3	3
Reach Compliance Code	_compli	compli	unknow
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	20 A	20 A	20 A
Collector-emitter maximum voltage	320 V	320 V	320 V
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Gate emitter threshold voltage maximum	2.3 V	2.3 V	2.3 V
Gate-emitter maximum voltage	12 V	12 V	12 V
JEDEC-95 code	TO-263AB	TO-262AA	TO-220AB
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSFM-T3
JESD-609 code	e3	e0	e3
Number of components	1	1	1
Number of terminals	2	3	3
Maximum operating temperature	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	150 W	150 W	150 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO
Terminal surface	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	AUTOMOTIVE IGNITION	AUTOMOTIVE IGNITION	AUTOMOTIVE IGNITION
Transistor component materials	SILICON	SILICON	SILICON
Nominal off time (toff)	15000 ns	15000 ns	15000 ns
Peak Reflow Temperature (Celsius)	260	-	NOT APPLICABLE
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED

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