HGTP20N35G3VL,
HGT1S20N35G3VL,
HGT1S20N35G3VLS
December 2001
20A, 350V N-Channel,
Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T
J
= 175
o
C
• Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt resis-
tor are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
PACKAGE
T0-220AB
T0-262AA
T0-263AB
BRAND
20N35GVL
20N35GVL
20N35GVL
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
COLLECTOR
(FLANGE)
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N35G3VLS9A.
The development type number for this device is TA49076.
R
1
GATE
R
2
EMITTER
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
375
24
20
20
±10
26
18
775
150
1.0
-40 to +175
260
6
Collector-Emitter Bkdn Voltage At 10mA, R
GE
= 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BV
CER
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
Collector Current Continuous At V
GE
= 5.0V, T
C
= +25
o
C, Figure 7 . . . . . . . . . . . . . I
C25
At V
GE
= 5.0V, T
C
= +100
o
C . . . . . . . . . . . . . . . . . . . . I
C100
Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Inductive Switching Current At L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . I
SCIS
o
At L = 2.3mH, T
C
= +175 C . . . . . . . . . . . . . . . . . . . . . . I
SCIS
Collector to Emitter Avalanche Energy At L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . E
AS
Power Dissipation Total At T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
NOTE: May be exceeded if I
GEM
is limited to 10mA.
©2001 Fairchild Semiconductor Corporation
UNITS
V
V
A
A
V
A
A
mJ
W
W/
o
C
o
C
o
C
KV
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETERS
Collector-Emitter Breakdown Voltage
SYMBOL
BV
CES
TEST CONDITIONS
I
C
= 10mA,
V
GE
= 0V
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= -40
o
C
Collector-Emitter Breakdown Voltage
BV
CER
I
C
= 10mA
V
GE
= 0V
R
GE
= 1kΩ
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= -40
o
C
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 10A
V
CE
= 12V
I
C
= 10A
V
GE
= 5V
V
CE
= 12V
I
C
= 10A
R
G
= 0Ω
I
C
= 10mA
V
CE
= 250V
V
CE
= 250V
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= 10A
V
GE
= 4.5V
T
C
= +25
o
C
T
C
= +25
o
C
MIN
310
320
320
300
315
315
-
TYP
345
350
355
340
345
350
3.7
MAX
380
380
390
375
375
390
-
UNITS
V
V
V
V
V
V
V
Gate Charge
Q
G(ON)
-
28.7
-
nC
Collector-Emitter Clamp Bkdn. Voltage
BV
CE(CL)
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +25
o
C
T
C
= +25
o
C
325
360
395
V
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
BV
ECS
I
CES
20
-
-
-
-
-
-
1.3
32
-
-
1.3
1.25
1.6
1.9
1.8
-
5
250
1.6
1.5
2.8
3.5
2.3
V
µA
µA
V
V
V
V
V
I
C
= 20A
V
GE
= 5.0V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 1mA
V
CE
= V
GE
Gate Series Resistance
Gate-Emitter Resistance
Gate-Emitter Leakage Current
Gate-Emitter Breakdown Voltage
Current Turn-Off Time-Inductive Load
R
1
R
2
I
GES
BV
GES
t
D(OFF)I
+
t
F(OFF)I
V
GE
=
±10V
I
GES
=
±2mA
-
10
±400
±12
-
1.0
17
±590
±14
15
-
25
±1000
-
30
kΩ
kΩ
µA
V
µs
I
C
= 10A, R
G
= 25Ω,
L = 550µH, R
L
= 26.4Ω, V
GE
= 5V,
V
CL
= 300V, T
C
= +175
o
C
L = 2.3mH,
V
G
= 5V,
R
G
= 0Ω
T
C
= +175
o
C
T
C
= +25
o
C
Inductive Use Test
I
SCIS
18
26
-
-
-
-
-
-
1.0
o
A
A
C/W
Thermal Resistance
R
θJC
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, V
CE
= 10V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
50
100
V
GE
=10V
80
7V
6.5V
6.0V
5.5V
5.0V
60
4.5V
40
4.0V
3.5V
20
3.0V
2.5V
0
0
2
4
6
8
10
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T
C
= +25
o
C
40
30
T
C
= +175
o
C
20
T
C
= +25
o
C
T
C
= -40
o
C
10
0
1
2
3
4
5
6
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
I
CE
, COLLECTOR EMITTER CURRENT (A)
I
CE
, COLLECTOR EMITTER CURRENT (A)
40
T
C
= +175
o
C
V
GE
= 5.0V
50
V
GE
= 4.5V
40
-40
o
C
+25
o
C
30
V
GE
= 4.5V
30
+175
o
C
20
V
GE
= 4.0V
10
20
10
0
0
0
1
2
3
4
5
V
CE(SAT)
, SATURATION VOLTAGE (V)
0
2
3
V
CE(SAT)
, SATURATION VOLTAGE (V)
1
4
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves
(Continued)
1.4
V
CE(SAT)
, SATURATION VOLTAGE (V)
2.2
V
CE(SAT)
, SATURATION VOLTAGE (V)
I
CE
= 20A
2.1
2.0
1.9
1.8
1.7
1.6
1.5
-25
+25
+75
+125
o
I
CE
= 10A
V
GE
= 4.0V
V
GE
= 4.0V
1.3
V
GE
= 4.5V
V
GE
= 4.5V
1.2
V
GE
= 5.0V
V
GE
= 4.5V
5.0V
1.1
+175
T
J
, JUNCTION TEMPERATURE ( C)
-25
+25
+75
+125
(
o
C)
+175
T
J
, JUNCTION TEMPERATURE
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
25
V
GE
= 5.0V
20
PACKAGE LIMITED
15
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
1.2
I
CE
= 1mA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-25
+25
+75
+125
(
o
C)
+175
T
J
, JUNCTION TEMPERATURE
10
5
0
+25
+50
+75
+100
+125
(
o
C)
+150
+175
T
C
, CASE TEMPERATURE
FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF CASE TEMPERATURE
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A
FUNCTION OF JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
V
TH
, NORMAILZED THRESHOLD VOLTAGE
I
CE
, COLLECTOR-EMITTER CURRENT (A)
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves
(Continued)
10
5
t
(OFF)I
, TURN OFF TIME (µs)
10
4
10
3
18
V
CL
= 300V, R
GE
= 25Ω, V
GE
= 5V, L= 550µH
V
ECS
= 20V
LEAKAGE CURRENT (µA)
16
I
CE
= 6A, R
L
= 50Ω
14
10
2
10
1
V
CES
= 250V
10
0
10
-1
+25
+50
+75
+100
+125
+150
+175
T
J
, JUNCTION TEMPERATURE (
o
C)
I
CE
=10A, R
L
= 30Ω
12
I
CE
=15A, R
L
= 20Ω
10
+25
+50
+75
+100
+125
+150
+175
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
45
40
35
30
25
20
15
+175
o
C
10
5
0
2
4
6
8
10
+25
o
C
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
I
CE
, COLLECTOR-EMITTER CURRENT (A)
V
GE
= 5V
1200
V
GE
= 5V
1000
E
AS
, ENERGY (mJ)
+25
o
C
800
600
400
+175
o
C
200
0
2
4
6
8
10
INDUCTANCE (mH)
INDUCTANCE (mH)
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
FIGURE 12. SELF CLAMPED INDUCTIVELY SWITCHING
ENERGY AS A FUNCTION OF INDUCTANCE
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
京公网安备 11010802033920号
EEWORLD
