CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 10Ω.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
V
CE(SAT)
V
GE(TH)
I
GES
SSOA
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= BV
CES
I
C
= I
C110
V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
MIN
600
15
-
-
-
-
3.4
-
V
CE
= 480V
V
CE
= 600V
120
20
-
-
-
-
-
-
-
-
-
-
TYP
-
28
-
-
1.4
1.5
4.8
-
-
-
8.4
91
122
28
24
151
55
295
500
500
MAX
-
-
250
5.0
1.8
1.9
6.3
±250
-
-
-
110
145
32
28
210
98
320
550
700
UNITS
V
V
µA
mA
V
V
V
nA
A
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
I
C
= 250µA, V
CE
= V
GE
V
GE
=
±20V
T
J
= 150
o
C, R
G
=
10Ω, V
GE
= 15V,
L = 100µH
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GEP
Q
G(ON)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
I
CE
= I
C110
, V
CE
= 0.5 BV
CES
I
CE
= I
C110
V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
IGBT and Diode at T
J
= 25
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10Ω
L = 1mH
Test Circuit (Figure 17)
2
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
NOTES:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 17.
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
TEST CONDITIONS
IGBT and Diode at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10Ω
L = 1mH
Test Circuit (Figure 17)
MIN
-
-
-
-
-
-
-
-
TYP
28
24
280
108
380
1.0
1.2
-
MAX
32
28
450
210
410
1.1
1.7
0.76
UNITS
ns
ns
ns
ns
µJ
mJ
mJ
o
C/W
Typical Performance Curves
50
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
= 15V
40
140
120
100
80
60
40
20
0
0
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V, L = 100µH
30
20
10
0
25
50
75
100
125
150
100
200
300
400
500
600
700
T
C
, CASE TEMPERATURE (
o
C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
f
MAX
, OPERATING FREQUENCY (kHz)
100
T
C
75
o
C
75
o
C
110
o
C
110
o
C
10
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 0.76
o
C/W, SEE NOTES
2
5
10
V
GE
15V
10V
15V
10V
T
J
= 150
o
C, R
G
= 10Ω,
L = 1mH, V
CE
= 480V
V
CE
= 360V, R
G
= 10Ω, T
J
= 125
o
C
12
I
SC
10
8
6
4
t
SC
2
10
11
12
13
14
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
150
350
300
250
200
400
1
20
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
14
450
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
300
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250µs
250
T
C
= 25
o
C
200
150
T
C
= -55
o
C
100
50
0
0
1
2
3
4
5
6
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
80
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
40
60
20
DUTY CYCLE <0.5%, V
GE
= 10V
PULSE DURATION = 250µs
0
0
2
4
6
8
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
4.0
E
ON2
, TURN-ON ENERGY LOSS (mJ)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
5
10
15
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
20
25
30
35
40
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
R
G
= 10Ω, L = 1mH, V
CE
= 480V
3.0
R
G
= 10Ω, L = 1mH, V
CE
= 480V
2.5
2.0
T
J
= 150
o
C; V
GE
= 10V OR 15V
1.5
1.0
0.5
0
T
J
= 25
o
C; V
GE
= 10V OR 15V
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
50
R
G
= 10Ω, L = 1mH, V
CE
= 480V
t
dI
, TURN-ON DELAY TIME (ns)
45
t
rI
, RISE TIME (ns)
200
R
G
= 10Ω, L = 1mH, V
CE
= 480V
175
150
125
100
75
50
25
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
0
5
10
15
20
25
30
35
40
5
10
15
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C AND T
J
= 150
o
C, V
GE
= 15V
20
25
30
35
40
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
40
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
35
30
25
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
4
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Typical Performance Curves
300
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
R
G
= 10Ω, L = 1mH, V
CE
= 480V
275
t
fI
, FALL TIME (ns)
250
225
200
175
150
125
100
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
110
100
T
J
= 150
o
C, V
GE
= 10V OR V
GE
= 15V
90
80
70
60
50
40
5
10
15
20
25
30
35
40
T
J
= 25
o
C, V
GE
= 10V OR 15V
Unless Otherwise Specified
(Continued)
120
R
G
= 10Ω, L = 1mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
300
V
GE
, GATE TO EMITTER VOLTAGE (V)
250
200
150
100
T
C
= 25
o
C
50
0
DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250µs
16
14
12
10
8
6
4
2
0
0
I
G (REF)
= 1mA, R
L
= 15Ω, T
C
= 25
o
C
T
C
= -55
o
C
T
C
= 150
o
C
V
CE
= 600V
V
CE
= 200V
V
CE
= 400V
5
6
7
8
9
10
11
12
13
14
15
10
20
30
40
50
60
70
80
90
100
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
5
FREQUENCY = 1MHz
4
C, CAPACITANCE (nF)
C
IES
3
2
C
OES
1
C
RES
0
0
5
10
15
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
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Industrial Control Electronics
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