HGTG20N60C3 datasheet, PDF - EEWORLD Datasheet

HGTG20N60C3, HGTP20N60C3,

HGT1S20N60C3S

Data Sheet

January 2000

File Number

4492.2

45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices

combining the best features of MOSFETs and bipolar

transistors. These devices have the high input impedance of

a MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

moderately between 25

o

C and 150

o

C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly developmental type TA49178.

Features

• 45A, 600V, T

C

= 25

o

C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T

J

= 150

o

C

• Short Circuit Rating

• Low Conduction Loss

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC STYLE TO-247

E

C

Ordering Information

PART NUMBER

HGTG20N60C3

HGTP20N60C3

HGT1S20N60C3S

PACKAGE

TO-247

TO-220AB

TO-263AB

BRAND

G20N60C3

G

COLLECTOR

(FLANGE)

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in the tape and reel, i.e.,

HGT1S20N60C3S9A.

Symbol

C

JEDEC TO-220AB (ALTERNATE VERSION)

E

C

G

COLLECTOR

(FLANGE)

E

JEDEC TO-263AB

COLLECTOR

(FLANGE)

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

|

Copyright

©

Intersil Corporation 2000

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

Absolute Maximum Ratings

T

C

= 25

o

C, Unless Otherwise Speciﬁed

ALL TYPES

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

Collector Current Continuous

At T

C

= 25

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C25

At T

C

= 110

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C110

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

CM

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GES

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GEM

Switching Safe Operating Area at T

J

= 150

o

C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA

Power Dissipation Total at T

C

= 25

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

Power Dissipation Derating T

C

> 25

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

ARV

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

J

, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

L

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

pkg

Short Circuit Withstand Time (Note 2) at V

GE

= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

SC

Short Circuit Withstand Time (Note 2) at V

GE

= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

SC

600

45

20

300

±20

±30

20A at 600V

164

1.32

100

-55 to 150

300

260

4

10

UNITS

V

A

V

W

W/

o

C

mJ

o

C

o

C

o

C

µs

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

CE(PK)

= 360V, T

J

= 125

o

C, R

G

= 10Ω.

Electrical Speciﬁcations

PARAMETER

T

C

= 25

o

C, Unless Otherwise Speciﬁed

SYMBOL

BV

CES

BV

ECS

I

CES

V

CE(SAT)

V

GE(TH)

I

GES

SSOA

TEST CONDITIONS

I

C

= 250µA, V

GE

= 0V

I

C

= 10mA, V

GE

= 0V

V

CE

= BV

CES

I

C

= I

C110

V

GE

= 15V

T

C

= 25

o

C

T

C

= 150

o

C

T

C

= 25

o

C

T

C

= 150

o

C

MIN

600

15

-

3.4

-

V

CE

= 480V

V

CE

= 600V

120

20

-

TYP

-

28

-

1.4

1.5

4.8

-

8.4

91

122

28

24

151

55

295

500

MAX

-

250

5.0

1.8

1.9

6.3

±250

-

110

145

32

28

210

98

320

550

700

UNITS

V

µA

mA

V

nA

A

V

nC

ns

µJ

Collector to Emitter Breakdown Voltage

Emitter to Collector Breakdown Voltage

Collector to Emitter Leakage Current

Collector to Emitter Saturation Voltage

Gate to Emitter Threshold Voltage

Gate to Emitter Leakage Current

Switching SOA

I

C

= 250µA, V

CE

= V

GE

V

GE

=

±20V

T

J

= 150

o

C, R

G

=

10Ω, V

GE

= 15V,

L = 100µH

Gate to Emitter Plateau Voltage

On-State Gate Charge

V

GEP

Q

G(ON)

t

d(ON)I

t

rI

t

d(OFF)I

t

fI

E

ON1

E

ON2

E

OFF

I

CE

= I

C110

, V

CE

= 0.5 BV

CES

I

CE

= I

C110

V

CE

= 0.5 BV

CES

V

GE

= 15V

V

GE

= 20V

Current Turn-On Delay Time

Current Rise Time

Current Turn-Off Delay Time

Current Fall Time

Turn-On Energy (Note 4)

Turn-Off Energy (Note 3)

IGBT and Diode at T

J

= 25

o

C

I

CE

= I

C110

V

CE

= 0.8 BV

CES

V

GE

= 15V

R

G

= 10Ω

L = 1mH

Test Circuit (Figure 17)

2

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

Electrical Speciﬁcations

PARAMETER

Current Turn-On Delay Time

Current Rise Time

Current Turn-Off Delay Time

Current Fall Time

Turn-On Energy (Note 4)

Turn-Off Energy (Note 3)

Thermal Resistance Junction To Case

NOTES:

3. Turn-Off Energy Loss (E

OFF

) is deﬁned as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

at the point where the collector current equals zero (I

CE

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

ON1

is the turn-on loss of the IGBT only. E

ON2

is the

turn-on loss when a typical diode is used in the test circuit and the diode is at the same T

J

as the IGBT. The diode type is specified in Figure 17.

T

C

= 25

o

C, Unless Otherwise Speciﬁed

(Continued)

SYMBOL

t

d(ON)I

t

rI

t

d(OFF)I

t

fI

E

ON1

E

ON2

E

OFF

R

θJC

TEST CONDITIONS

IGBT and Diode at T

J

= 150

o

C

I

CE

= I

C110

V

CE

= 0.8 BV

CES

V

GE

= 15V

R

G

= 10Ω

L = 1mH

Test Circuit (Figure 17)

MIN

-

TYP

28

24

280

108

380

1.0

1.2

-

MAX

32

28

450

210

410

1.1

1.7

0.76

UNITS

ns

µJ

mJ

o

C/W

Typical Performance Curves

50

I

CE

, DC COLLECTOR CURRENT (A)

Unless Otherwise Speciﬁed

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

V

GE

= 15V

40

140

120

100

80

60

40

20

0

T

J

= 150

o

C, R

G

= 10Ω, V

GE

= 15V, L = 100µH

30

20

10

0

25

50

75

100

125

150

100

200

300

400

500

600

700

T

C

, CASE TEMPERATURE (

o

C)

V

CE

, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

t

SC

, SHORT CIRCUIT WITHSTAND TIME (µs)

f

MAX

, OPERATING FREQUENCY (kHz)

100

T

C

75

o

C

75

o

C

110

o

C

110

o

C

10

f

MAX1

= 0.05 / (t

d(OFF)I

+ t

d(ON)I

)

f

MAX2

= (P

D

- P

C

) / (E

ON2

+ E

OFF

)

P

C

= CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)

R

ØJC

= 0.76

o

C/W, SEE NOTES

2

5

10

V

GE

15V

10V

15V

10V

T

J

= 150

o

C, R

G

= 10Ω,

L = 1mH, V

CE

= 480V

V

CE

= 360V, R

G

= 10Ω, T

J

= 125

o

C

12

I

SC

10

8

6

4

t

SC

2

10

11

12

13

14

15

V

GE

, GATE TO EMITTER VOLTAGE (V)

150

350

300

250

200

400

1

20

40

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

3

I

SC

, PEAK SHORT CIRCUIT CURRENT (A)

14

450

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

Typical Performance Curves

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

100

Unless Otherwise Speciﬁed

(Continued)

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

300

DUTY CYCLE <0.5%, V

GE

= 15V

PULSE DURATION = 250µs

250

T

C

= 25

o

C

200

150

T

C

= -55

o

C

100

50

0

1

2

3

4

5

6

V

CE

, COLLECTOR TO EMITTER VOLTAGE (V)

T

C

= 150

o

C

80

T

C

= -55

o

C

T

C

= 25

o

C

T

C

= 150

o

C

40

60

20

DUTY CYCLE <0.5%, V

GE

= 10V

PULSE DURATION = 250µs

0

2

4

6

8

10

V

CE

, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE

FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

4.0

E

ON2

, TURN-ON ENERGY LOSS (mJ)

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

5

10

15

T

J

= 25

o

C, T

J

= 150

o

C, V

GE

= 15V

20

25

30

35

40

T

J

= 25

o

C, T

J

= 150

o

C, V

GE

= 10V

E

OFF

, TURN-OFF ENERGY LOSS (mJ)

R

G

= 10Ω, L = 1mH, V

CE

= 480V

3.0

R

G

= 10Ω, L = 1mH, V

CE

= 480V

2.5

2.0

T

J

= 150

o

C; V

GE

= 10V OR 15V

1.5

1.0

0.5

0

T

J

= 25

o

C; V

GE

= 10V OR 15V

5

10

15

20

25

30

35

40

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

50

R

G

= 10Ω, L = 1mH, V

CE

= 480V

t

dI

, TURN-ON DELAY TIME (ns)

45

t

rI

, RISE TIME (ns)

200

R

G

= 10Ω, L = 1mH, V

CE

= 480V

175

150

125

100

75

50

25

T

J

= 25

o

C, T

J

= 150

o

C, V

GE

= 15V

0

5

10

15

20

25

30

35

40

5

10

15

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

T

J

= 25

o

C AND T

J

= 150

o

C, V

GE

= 15V

20

25

30

35

40

T

J

= 25

o

C, T

J

= 150

o

C, V

GE

= 10V

40

T

J

= 25

o

C, T

J

= 150

o

C, V

GE

= 10V

35

30

25

20

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

4

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

Typical Performance Curves

300

t

d(OFF)I

, TURN-OFF DELAY TIME (ns)

R

G

= 10Ω, L = 1mH, V

CE

= 480V

275

t

fI

, FALL TIME (ns)

250

225

200

175

150

125

100

5

10

15

20

25

30

35

40

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

T

J

= 25

o

C, V

GE

= 10V, V

GE

= 15V

T

J

= 150

o

C, V

GE

= 10V, V

GE

= 15V

110

100

T

J

= 150

o

C, V

GE

= 10V OR V

GE

= 15V

90

80

70

60

50

40

5

10

15

20

25

30

35

40

T

J

= 25

o

C, V

GE

= 10V OR 15V

Unless Otherwise Speciﬁed

(Continued)

120

R

G

= 10Ω, L = 1mH, V

CE

= 480V

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER

CURRENT

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

300

V

GE

, GATE TO EMITTER VOLTAGE (V)

250

200

150

100

T

C

= 25

o

C

50

0

DUTY CYCLE <0.5%, V

CE

= 10V

PULSE DURATION = 250µs

16

14

12

10

8

6

4

2

0

I

G (REF)

= 1mA, R

L

= 15Ω, T

C

= 25

o

C

T

C

= -55

o

C

T

C

= 150

o

C

V

CE

= 600V

V

CE

= 200V

V

CE

= 400V

5

6

7

8

9

10

11

12

13

14

15

10

20

30

40

50

60

70

80

90

100

V

GE

, GATE TO EMITTER VOLTAGE (V)

Q

g

, GATE CHARGE (nC)

FIGURE 13. TRANSFER CHARACTERISTIC

FIGURE 14. GATE CHARGE WAVEFORMS

5

FREQUENCY = 1MHz

4

C, CAPACITANCE (nF)

C

IES

3

2

C

OES

1

C

RES

0

5

10

15

20

25

V

CE

, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE

5

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