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5962-3826718QUA

Description
EEPROM, 128KX8, 150ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32
Categorystorage    storage   
File Size340KB,21 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

5962-3826718QUA Overview

EEPROM, 128KX8, 150ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32

5962-3826718QUA Parametric

Parameter NameAttribute value
Parts packaging codeQFJ
package instructionCERAMIC, LCC-32
Contacts32
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time150 ns
command user interfaceNO
Data pollingYES
JESD-30 codeR-CQCC-N32
JESD-609 codee0
length13.97 mm
memory density1048576 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Encapsulate equivalent codeLCC32,.45X.55
Package shapeRECTANGULAR
Package formCHIP CARRIER
page size128 words
Parallel/SerialPARALLEL
power supply5 V
Programming voltage5 V
Certification statusQualified
ready/busyYES
Filter levelMIL-PRF-38535 Class Q
Maximum seat height3.048 mm
Maximum standby current0.00035 A
Maximum slew rate0.1 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
switch bitNO
width11.43 mm
Maximum write cycle time (tWC)10 ms
Base Number Matches1
EEPROM
Austin Semiconductor, Inc.
128K x 8 EEPROM
EEPROM Memory
AVAILABLE AS MILITARY
SPECIFICATIONS
SMD 5962-38267
MIL-STD-883
AS58C1001
PIN ASSIGNMENT
(Top View)
32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ),
32-Pin SOP (DG)
RDY/BUSY\
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
RES\
WE\
A13
A8
A9
A11
OE\
A10
CE\
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
FEATURES
High speed: 150, 200, and 250ns
Data Retention: 10 Years
Low power dissipation, active current (20mW/MHz (TYP)),
standby current (100µW(MAX))
Single +5V (+10%) power supply
Data Polling and Ready/Busy Signals
Erase/Write Endurance (10,000 cycles in a page mode)
Software Data protection Algorithm
Data Protection Circuitry during power on/off
Hardware Data Protection with RES pin
Automatic Programming:
Automatic Page Write: 10ms (MAX)
128 Byte page size
32-Pin LCC (ECA)
A12
A15
A16
NC
Vcc
WE\
NC
OPTIONS
MARKINGS
-15
-20
-25
ECA
F
SF
DCJ
DG
No. 208
No. 306
No. 305
No. 508
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
5
6
7
8
9
10
11
12
13
Timing
150ns access
200ns access
250ns access
Packages
Ceramic LCC
Ceramic Flat Pack
Radiation Shielded Ceramic FP*
Ceramic SOJ
Plastic SOP
Operating Temperature Ranges
-Military (-55
o
C to +125
o
C)
-Industrial (-40
o
C to +85
o
C)
4 3 2 1 32 31 30
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE\
A10
CE\
I/O 7
14 15 16 17 18 19 20
I/O 6
I/O 5
I/O 4
I/O 3
Vss
I/O 2
I/O 1
XT
IT
*NOTE:
Package lid is connected to ground (Vss).
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS
Electrically Erasable Programmable Read Only Memory (EEPROM)
organized as 131, 072 x 8 bits. The AS58C1001 is capable or in
system electrical Byte and Page reprogrammability.
The AS58C1001 achieves high speed access, low power
consumption, and a high level of reliability by employing advanced
MNOS memory technology and CMOS process and circuitry
technology and CMOS process and circuitry technology.
This device has a 128-Byte Page Programming function to make its
erase and write operations faster. The AS58C1001 features Data
Polling and a Ready/Busy signal to indicate completion of erase and
programming operations.
AS58C1001
Rev. 5.1 7/04
This EEPROM provides several levels of data protection.
Hardware data protection is provided with the RES pin, in addition to
noise protection on the WE signal and write inhibit during power on
and off. Software data protection is implemented using JEDEC
Optional Standard algorithm.
The AS58C1001 is designed for high reliability in the most
demanding applications. Data retention is specified for 10 years and
erase/write endurance is guaranteed to a minimum of 10,000 cycles in
the Page Mode.
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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