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ISL6610, ISL6610A
Data Sheet
November 22, 2006
FN6395.0
Dual Synchronous Rectified MOSFET
Drivers
The ISL6610, ISL6610A integrates two ISL6609, ISL6609A
drivers with enable function removed and is optimized to
drive two independent power channels in a synchronous-
rectified buck converter topology. These drivers, combined
with an Intersil ISL63xx or ISL65xx multiphase PWM
controller, form a complete high efficiency voltage regulator
at high switching frequency.
The IC is biased by a single low voltage supply (5V),
minimizing driver switching losses in high MOSFET gate
capacitance and high switching frequency applications.
Each driver is capable of driving a 3nF load with less than
10ns rise/fall time. Bootstrapping of the upper gate driver is
implemented via an internal low forward drop diode,
reducing implementation cost, complexity, and allowing the
use of higher performance, cost effective N-Channel
MOSFETs. Adaptive shoot-through protection is integrated
to prevent both MOSFETs from conducting simultaneously.
The ISL6610, ISL6610A features 4A typical sink current for
the lower gate driver, enhancing the lower MOSFET gate
hold-down capability during PHASE node rising edge,
preventing power loss caused by the self turn-on of the lower
MOSFET due to the high dV/dt of the switching node.
The ISL6610, ISL6610A also features an input that
recognizes a high-impedance state, working together with
Intersil multiphase PWM controllers to prevent negative
transients on the controlled output voltage when operation is
suspended. This feature eliminates the need for the schottky
diode that may be utilized in a power system to protect the
load from negative output voltage damage.
In addition, the ISL6610As bootstrap function is designed to
prevent the BOOT capacitor from overcharging, should
excessively large negative swings occur at the transitions of
the PHASE node.
Features
• 5V Quad N-Channel MOSFET Drives for Two
Synchronous Rectified Bridges
• Pin-to-pin Compatible with ISL6614 (12V Drive)
• Adaptive Shoot-Through Protection
• 0.4Ω On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency
- Fast Output Rise and Fall
- Low Tri-State Hold-Off Time
• BOOT Capacitor Overcharge Prevention (ISL6610A)
• Low V
F
Internal Bootstrap Diode
• Power-On Reset
• QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
No Leads-Product Outline
- Near Chip-Scale Package Footprint; Improves PCB
Utilization, Thinner Profile
• Pb-Free Plus Anneal Available (RoHS Compliant)
Related Literature
• Technical Brief TB389 “PCB Land Pattern Design and
Surface Mount Guidelines for QFN (MLFP) Packages”
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Ordering Information
PART
NUMBER
(Note)
ISL6610CBZ
ISL6610CRZ
ISL6610IBZ
ISL6610IRZ
PART
MARKING
6610CBZ
66 10CRZ
6610IBZ
66 10IRZ
TEMP.
RANGE
(°C)
0 to +70
0 to +70
PACKAGE
(Pb-Free)
14 Ld SOIC
PKG.
DWG. #
M14.15
16 Ld 4x4 QFN L16.4x4
M14.15
-40 to +85 14 Ld SOIC
Applications
• Core Voltage Supplies for Intel® and AMD®
Microprocessors
• High Frequency Low Profile High Efficiency DC/DC
Converters
• High Current Low Voltage DC/DC Converters
• Synchronous Rectification for Isolated Power Supplies
-40 to +85 16 Ld 4x4 QFN L16.4x4
0 to +70
0 to +70
14 Ld SOIC
M14.15
ISL6610ACBZ 6610ACBZ
ISL6610ACRZ 66 10ACRZ
ISL6610AIBZ
ISL6610AIRZ
6610AIBZ
66 10AIRZ
16 Ld 4x4 QFN L16.4x4
M14.15
-40 to +85 14 Ld SOIC
-40 to +85 16 Ld 4x4 QFN L16.4x4
Add “-T” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2006. All Rights Reserved
AMD® is a registered trademark of Advanced Micro Devices, Inc.
All other trademarks mentioned are the property of their respective owners.
ISL6610, ISL6610A
Pinouts
ISL6610, ISL6610A
(14 LD SOIC)
TOP VIEW
PWM1
PWM2
GND
LGATE1
PVCC
PGND
LGATE2
1
2
3
4
5
6
7
14 VCC
13 PHASE1
12 UGATE1
11 BOOT1
10 BOOT2
9 UGATE2
8 PHASE2
GND 1
LGATE1 2
PVCC 3
PGND 4
5
NC1
6
LGATE2
7
PHASE2
8
NC2
17
GND
ISL6610, ISL6610A
(16 LD QFN)
TOP VIEW
PHASE1
13
12 UGATE1
11 BOOT1
10 BOOT2
9
UGATE2
PWM2
PWM1
15
VCC
14
16
Block Diagram
ISL6610, ISL6610A
VCC
PVCC
R
BOOT
BOOT1
UGATE1
4.9K
SHOOT-
THROUGH
PROTECTION
PHASE1
CHANNEL 1
PVCC
PWM1
4.6K
PGND
VCC
4.9K
CONTROL
LOGIC
PVCC
R
BOOT
BOOT2
UGATE2
PWM2
4.6K
GND
SHOOT-
THROUGH
PROTECTION
LGATE1
PGND
PHASE2
CHANNEL 2
PVCC
LGATE2
PGND
PAD
FOR ISL6610CR/10ACR, THE PAD ON THE BOTTOM SIDE OF
THE QFN PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND.
INTEGRATED 3Ω RESISTOR (R
BOOT
) AVAILABLE ONLY IN ISL6610A
2
FN6395.0
November 22, 2006
ISL6610, ISL6610A
Typical Application - Multiphase Converter Using ISL6610 Gate Drivers
+5V
BOOT1
+12V
UGATE1
VCC
PHASE1
LGATE1
+5V
DUAL
DRIVER
ISL6610
FB
VSEN
COMP
V
CC
ISEN1
PGOOD
EN
PWM1
PWM2
MAIN ISEN2
CONTROL
ISL65xx
PWM1
PWM2
LGATE2
NC1
GND
PGND
PHASE2
NC2
PVCC
+5V
BOOT2
+12V
UGATE2
VID
+V
CORE
ISEN3
FS/DIS
PWM3
PWM4
GND
ISEN4
UGATE1
VCC
PHASE1
+5V
BOOT1
+12V
LGATE1
DUAL
DRIVER
ISL6610
PVCC
+5V
BOOT2
+12V
UGATE2
PWM1
PWM2
LGATE2
PHASE2
GND
PGND
3
FN6395.0
November 22, 2006
ISL6610, ISL6610A
Absolute Maximum Ratings
Supply Voltage (PVCC, VCC) . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (V
EN
, V
PWM
) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (V
BOOT-GND
). . . -0.3V to 25V (DC) or 36V (<200ns)
BOOT To PHASE Voltage (V
BOOT-PHASE
) . . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 15V (DC)
GND -8V (<20ns Pulse Width, 10μJ) to 30V (<100ns)
UGATE Voltage . . . . . . . . . . . . . . . . V
PHASE
- 0.3V (DC) to V
BOOT
V
PHASE
- 5V (<20ns Pulse Width, 10μJ) to V
BOOT
LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V
GND - 2.5V (<20ns Pulse Width, 5μJ) to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . .-40°C to +125°C
HBM ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV
Thermal Information
Thermal Resistance (Typical)
θ
JA
(°C/W)
θ
JC
(°C/W)
SOIC Package (Note 1) . . . . . . . . . . . .
90
N/A
QFN Package (Notes 2 and 3). . . . . . .
46
8.5
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300°C
(SOIC - Lead Tips Only)
Recommended Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . .-40°C to +85°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . +125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
±10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
+150°C max junction temperature is intended for short periods of time to prevent shortening the lifetime. Constantly operated at 150°C may shorten the life of the part.
NOTES:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
3.
θ
JC
, “case temperature” location is at the center of the package underside exposed pad. See Tech Brief TB379 for details.
Electrical Specifications
PARAMETER
SUPPLY CURRENT
Bias Supply Current
These specifications apply for T
A
= -40°C to +85°C, unless otherwise noted
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
VCC+PVCC
PWM pin floating, V
VCC
= V
PVCC
= 5V
F
PWM
= 300kHz, V
VCC
= V
PVCC
= 5V
-
-
240
1.6
-
-
μA
mA
BOOTSTRAP DIODE
Forward Voltage
V
F
Forward bias current = 2mA
T
A
= 0°C to +70°C
Forward bias current = 2mA
T
A
= -40°C to +85°C
POWER-ON RESET
POR Rising
POR Falling
Hysteresis
PWM INPUT
Sinking Impedance
Source Impedance
Tri-State Rising Threshold
Tri-State Falling Threshold
Tri-State Shutdown Holdoff Time
SWITCHING TIME (Note 4, See Figure 1)
UGATE Rise Time
LGATE Rise Time
UGATE Fall Time
LGATE Fall Time
UGATE Turn-Off Propagation Delay
LGATE Turn-Off Propagation Delay
t
RU
t
RL
t
FU
t
FL
t
PDLU
t
PDLL
3nF Load
3nF Load
3nF Load
3nF Load
Outputs Unloaded
Outputs Unloaded
-
-
-
-
-
-
8.0
8.0
8.0
4.0
18
25
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
t
TSSHD
R
PWM_SNK
R
PWM_SRC
V
VCC
= V
PVCC
= 5V (250mV Hysteresis)
V
VCC
= V
PVCC
= 5V(300mV Hysteresis)
-
-
1.00
3.10
-
4.6
4.9
1.20
3.41
80
-
-
1.40
3.70
-
kΩ
kΩ
V
V
ns
-
2.6
-
3.4
3.0
400
4.2
-
-
V
V
mV
0.30
0.30
0.60
0.60
0.70
0.75
V
V
4
FN6395.0
November 22, 2006
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