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IRG4PC50K-E

Description
Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size214KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IRG4PC50K-E Overview

Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

IRG4PC50K-E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
package instructionTO-247AD, 3 PIN
Reach Compliance Codeunknown
Other featuresLOW CONDUCTION LOSS
Shell connectionCOLLECTOR
Maximum collector current (IC)52 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
JEDEC-95 codeTO-247AD
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)430 ns
Nominal on time (ton)72 ns
Base Number Matches1
PD - 91583B
IRG4PC50K
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UltraFast IGBT
C
Features
• High short circuit rating optimized for motor control,
t
sc
=10µs, @360V V
CE
(start), T
J
= 125°C,
V
GE
= 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.84V
@V
GE
= 15V, I
C
= 30A
n-channel
Benefits
• As a Freewheeling Diode we recommend our
HEXFRED
TM
ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBTs offer highest power
density motor controls possible
• This part replaces the IRGPC50K and IRGPC50M
devices
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
52
30
104
104
10
±20
170
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
www.irf.com
1
4/15/2000

IRG4PC50K-E Related Products

IRG4PC50K-E IRG4PC50K-EPBF
Description Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN 52A, 600V, N-CHANNEL IGBT, TO-247AD, TO-247AD, 3 PIN
Is it Rohs certified? incompatible conform to
Maker Infineon Infineon
package instruction TO-247AD, 3 PIN FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown compliant
Other features LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 52 A 52 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE SINGLE
JEDEC-95 code TO-247AD TO-247AD
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 430 ns 430 ns
Nominal on time (ton) 72 ns 72 ns
Base Number Matches 1 1
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