PD-91678B
IRG4RC10SD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1V(typ) @ 2A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
• Tight parameter distribution
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard TO-252AA package
C
Standard Speed CoPack
IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.10V
@V
GE
= 15V, I
C
= 2.0A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
600
14
8.0
18
18
4.0
16
± 20
38
15
-55 to +150
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Typ.
–––
–––
–––
0.3 (0.01)
Max.
3.3
7.0
50
–––
Units
°C/W
g (oz)
*
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
06/14/07
IRG4RC10SD
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
V
FM
I
GES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600 —
Temperature Coeff. of Breakdown Voltage — 0.64
Collector-to-Emitter Saturation Voltage
— 1.58
— 2.05
— 1.68
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
— -9.5
Forward Transconductance
3.65 5.48
Zero Gate Voltage Collector Current
—
—
—
—
Diode Forward Voltage Drop
—
1.5
—
1.4
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
— V/°C V
GE
= 0V, I
C
= 1.0mA
1.8
I
C
= 8.0A
V
GE
= 15V
—
V
I
C
= 14.0A
See Fig. 2, 5
—
I
C
= 8.0A, T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
= 100V, I
C
=8.0A
250
µA
V
GE
= 0V, V
CE
= 600V
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.8
V
I
C
=4.0A
See Fig. 13
1.7
I
C
=4.0A, T
J
= 150°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
15
22
2.42 3.6
6.53 9.8
76
—
32
—
815 1200
720 1080
0.31 —
3.28 —
3.60 10.9
1.46 2.6
70
—
36
—
890 —
890 —
3.83 —
7.5
—
280 —
30
—
4.0
—
28
42
38
57
2.9 5.2
3.7 6.7
40
60
70 105
280 —
235 —
nC
Conditions
I
C
= 8.0A
V
CC
= 400V
See Fig. 8
V
GE
= 15V
T
J
= 25°C
I
C
= 8.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 100Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
I
C
= 5.0A
T
J
= 150°C, See Fig. 10,11, 18
I
C
= 8.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 100Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
See Fig. 7
ƒ = 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C
14
I
F
=4.0A
T
J
= 25°C See Fig.
T
J
= 125°C
15
V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C
16
di/dt = 200A/µs
T
J
= 25°C See Fig.
T
J
= 125°C
17
ns
mJ
mJ
ns
mJ
nH
pF
ns
A
nC
A/µs
Details of note
through
are on the last page
2
www.irf.com
IRG4RC10SD
2.50
For both:
2.00
LOAD CURRENT (A)
Duty cycle: 50%
TJ = 125°C
PCB Mount, Ta = 55°C
Tsink = 90°C
Gate drive as specified
Power Dissipation =
1.4
W
1.50
Square wave:
60% of rated
voltage
1.00
I
0.50
Ideal diodes
0.00
0.1
1
10
100
f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
T
J
= 25
°
C
10
T = 150
°
C
J
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector Current (A)
10
T
J
= 150
°
C
T
J
= 25
°
C
V
CC
= 50V
5µs
PULSE WIDTH
5µs
PULSE WIDTH
6
8
10
12
1
0.5
V
GE
= 15V
80µs PULSE WIDTH
1.0
1.5
2.0
2.5
3.0
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
www.irf.com
3
IRG4RC10SD
16
3.00
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 16 A
Maximum DC Collector Current(A)
12
2.50
8
2.00
I
C
=
8A
4
1.50
I
C
=
4A
0
25
50
75
100
125
150
1.00
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4RC10SD
500
400
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 8A
C, Capacitance (pF)
Cies
300
15
Coes
200
10
100
Cres
5
0
1
10
100
0
0
5
10
15
20
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.60
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
3.55
I
C
= 8A
3.50
100
R
G
=
100Ω
Ohm
V
GE
= 15V
V
CC
= 480V
I
C
=
16
A
10
3.45
I
C
=
I
C
=
1
8
A
4
A
3.40
3.35
3.30
0
20
40
60
80
100
R
G
G
Gate Resistance (Ohm)
R
,
, Gate Resistance (Ω)
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
www.irf.com
5
京公网安备 11010802033920号
EEWORLD
