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93AA46AT-I/MCGX

Description
EEPROM, 128X8, Serial, CMOS, PDSO8
Categorystorage    storage   
File Size703KB,38 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
Download Datasheet Parametric View All

93AA46AT-I/MCGX Overview

EEPROM, 128X8, Serial, CMOS, PDSO8

93AA46AT-I/MCGX Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrochip
package instruction2 X 3 MM, 0.90 MM HEIGHT, LEAD FREE, PLASTIC, MO-229, DFN-8
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum clock frequency (fCLK)3 MHz
JESD-30 codeR-PDSO-N8
JESD-609 codee3
length3 mm
memory density1024 bit
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals8
word count128 words
character code128
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128X8
Package body materialPLASTIC/EPOXY
encapsulated codeHVSON
Package shapeRECTANGULAR
Package formSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1 mm
Serial bus typeMICROWIRE
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formNO LEAD
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width2 mm
Maximum write cycle time (tWC)6 ms
Base Number Matches1
93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C
93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C
93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C
1K-16K Microwire Compatible Serial EEPROMs
Features:
• Densities from 1 Kbits through 16 Kbits
• Low-power CMOS technology
• Available with or without ORG function:
With ORG function:
- ORG pin at Logic LO: 8-bit word
- ORG pin at Logic HI: 16-bit word
Without ORG function:
- ‘A’ version: 8-bit word
- ‘B’ version: 16-bit word
Program Enable pin:
- Write-protect for entire array
(93XX76C and 93XX86C only)
Self-timed Erase/Write cycles
(including auto-erase)
Automatic ERAL before WRAL
Power-on/off data protection circuitry
Industry standard 3-wire serial I/O
Device Status signal (Ready/Busy)
Sequential Read function
1,000,000 E/W cycles
Data retention > 200 years
Temperature ranges supported:
- Industrial (I)
- Automotive (E)
-40°C to +85°C
-40°C to +125°C
Description:
Microchip Technology Inc. supports the 3-wire
Microwire bus with low-voltage serial Electrically
Erasable PROMs (EEPROM) that range in density
from 1 Kbits up to 16 Kbits. Each density is available
with and without the ORG functionality, and selected by
the part number ordered. Advanced CMOS technology
makes these devices ideal for low power, nonvolatile
memory applications. The entire series of Microwire
devices are available in the standard 8-lead PDIP and
SOIC packages as well as the more advanced packag-
ing such as the 8-lead MSOP, 8-lead TSSOP, 6-lead
SOT-23, and 8-lead DFN (2x3). These packages are all
available in a Pb-free (Matte Tin) finish. Packaging with
the Sn/Pb finish is also available as a custom device.
Pin Diagrams (not to scale)
PDIP/SOIC
(P, SN)
CS
DI
DO
1
3
4
8
7
6
5
V
CC
PE
NC
V
CC
CS
CLK
ROTATED SOIC
(ex: 93LC46BX)
(2,3)
(1,3)
1
2
3
4
8
7
6
5
ORG
V
SS
DO
DI
(1,3)
CLK 2
ORG
V
SS
DFN (MC)
CS
CLK
DI
DO
TSSOP/MSOP
(ST, MS)
CS
CLK
DI
DO
1
2
3
4
8
7
6
5
V
CC
DO
PE
(2,3)
V
SS
ORG
(1,3)
DI
V
SS
1
2
3
4
8
7
6
5
V
CC
PE
(2,3)
ORG
(1,3)
V
SS
SOT-23
(OT)
1
2
3
6
5
4
V
CC
CS
CLK
Pin Function Table
Name
CS
CLK
DI
DO
V
SS
PE
ORG
V
CC
Note:
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
Program Enable
Memory Configuration
Power Supply
ORG and PE functionality not available in
all products. See Table 1-1, Device
Selection Table.
Function
Note 1:
ORG pin: Only on 93XX46C/56C/66C/76C/86C.
2:
PE pin: Only on 93XX76C/86C.
3:
ORG/PE: No internal connections on 93XXA/B.
Note:
Please visit www.microchip.com/Pbfree for the latest information on Pb-free conversion.
©
2005 Microchip Technology Inc.
DS21929A-page 1
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