PD - 94038A
HEXFET
®
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJ9540
100V, P-CHANNEL
Product Summary
Part Number
IRF5NJ9540
BVDSS
-100V
R
DS(on)
0.117Ω
I
D
-18A
Fifth Generation HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
-18
-11
-72
75
0.6
±20
260
-11
7.5
4.1
-55 to 150
o
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
C
300 (for 5 s)
1.0 (Typical)
g
For footnotes refer to the last page
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1
7/13/01
IRF5NJ9540
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
VGS = 10V, ID = -11A
➃
VDS = VGS, ID = -250µA
VDS = -50V, IDS = -11A
➃
VDS = -100V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-10V, ID = -11A
VDS = -80V
VDD = -50V, ID = -11A,
VGS =-10V, RG = 5.1Ω
BVDSS
Drain-to-Source Breakdown Voltage
-100
—
—
∆BV
DSS/∆T J Temperature Coefficient of Breakdown — -0.104 —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
— 0.117
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
—
-4.0
gfs
Forward Transconductance
5.0
—
—
IDSS
Zero Gate Voltage Drain Current
—
—
-25
—
—
-250
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
109
19
53
29
135
87
84
—
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1340
428
246
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-18
-72
-1.6
220
1200
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = -11A, VGS = 0V
➃
Tj = 25°C, IF = -11A, di/dt
≤
-100A/µs
VDD
≤
-50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
1.67
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRF5NJ9540
100
-I
D
, Drain-to-Source Current (A)
10
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
100
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
-4.5V
1
1
-4.5V
0.1
0.1
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
0.1
0.1
20µs PULSE WIDTH
T = 150 C
J
°
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
-I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
T
J
= 150
°
C
10
I
D
= -18A
2.0
1.5
1.0
1
0.5
0.1
4
6
8
15
V DS = -25V
20µs PULSE WIDTH
10
12
14
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF5NJ9540
3000
2500
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -11A
16
C, Capacitance (pF)
V
DS
= -80V
V
DS
= -50V
V
DS
= -20V
2000
Ciss
1500
12
1000
C
oss
C
rss
8
500
4
0
1
10
100
0
0
20
40
FOR TEST CIRCUIT
SEE FIGURE 13
60
80
100
120
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
T
J
= 150
°
C
-I
SD
, Reverse Drain Current (A)
-I D, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100
T
J
= 25
°
C
1
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
1ms
10ms
100
1000
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
1.4
1.6
-V
SD
,Source-to-Drain Voltage (V)
-VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF5NJ9540
20
V
DS
V
GS
15
R
D
-I
D
, Drain Current (A)
D.U.T.
+
10
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
5
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
V
GS
0
25
50
75
100
125
150
10%
T
C
, Case Temperature ( ° C)
90%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
V
DS
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.001
0.01
1
P
DM
t
1
t
2
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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R
G
V
DD
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