PD - 94071
SMPS MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Server Processor Power Synchronous FET
l
Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
Benefits
l
Ultra-Low Gate Impedance
l
Very Low RDS(on) at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
T
J
, T
STG
IRF3709
IRF3709S
IRF3709L
HEXFET
®
Power MOSFET
V
DSS
30V
R
DS(on)
max
9.0mΩ
I
D
90A
TO-220AB
IRF3709
D
2
Pak
IRF3709S
TO-262
IRF3709L
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 20
90
57
360
120
3.1
0.96
-55 to + 150
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
–––
0.50
–––
–––
Max.
1.04
–––
62
40
Units
°C/W
Notes
through
are on page 11
www.irf.com
1
02/20/01
IRF3709/3709S/3709L
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.029
6.4
7.4
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
9.0
V
GS
= 10V, I
D
= 15A
mΩ
10.5
V
GS
= 4.5V, I
D
= 12A
3.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 24V, V
GS
= 0V
µA
100
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 16V
nA
-200
V
GS
= -16V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
53
––– –––
S
V
DS
= 15V, I
D
= 30A
–––
27
41
I
D
= 15A
–––
6.7 –––
nC
V
DS
= 16V
–––
9.7 –––
V
GS
= 5.0V
–––
22 –––
V
GS
= 0V, V
DS
= 10V
–––
11 –––
V
DD
= 15V
––– 171 –––
I
D
= 30A
ns
–––
21 –––
R
G
= 1.8Ω
–––
9.2 –––
V
GS
= 4.5V
––– 2672 –––
V
GS
= 0V
––– 1064 –––
pF
V
DS
= 16V
––– 109 –––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
382
30
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.88
0.82
48
46
48
52
90
A
360
1.3
–––
72
69
72
78
V
ns
nC
ns
nC
V
SD
t
rr
Q
rr
t
rr
Q
rr
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 125°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 30A, V
R
=15V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 30A, V
R
=15V
di/dt = 100A/µs
2
www.irf.com
IRF3709/3709S/3709L
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
1000
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
2.7V
2.7V
10
10
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
T
J
= 25
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 90A
I
D
, Drain-to-Source Current (A)
1.5
T
J
= 150
°
C
100
1.0
0.5
10
2.0
V DS = 15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF3709/3709S/3709L
4000
V
GS
, Gate-to-Source Voltage (V)
C, Capacitance (pF)
3000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
6
I
D
=
30A
5
V
DS
= 24V
V
DS
= 15V
V
DS
= 6V
Ciss
4
2000
3
1000
Coss
2
1
0
1
Crss
10
100
0
0
5
10
15
20
25
30
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150
°
C
I
D
, Drain Current (A)
100
1000
10us
10
100
100us
1ms
T
J
= 25
°
C
1
10
10ms
0.1
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
1
1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF3709/3709S/3709L
100
V
DS
LIMITED BY PACKAGE
R
D
V
GS
80
D.U.T.
+
R
G
I
D
, Drain Current (A)
-
V
DD
60
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
40
Fig 10a.
Switching Time Test Circuit
20
V
DS
90%
0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T = P
DM
x Z
thJC
+ T
C
J
0.001
0.01
0.1
P
DM
t
1
t
2
1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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