CMRDM3575
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMRDM3575
consists of complementary N-Channel and P-Channel
Enhancement-mode silicon MOSFETs designed for
high speed pulsed amplifier and driver applications.
These MOSFETs offer Low rDS(ON) and Low
Threshold Voltage.
MARKING CODE: CT
SOT-963 CASE
• Device is
Halogen Free
by design
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, tp < 5.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• Power Dissipation: 125mW
• Low Package Profile: 0.5mm (MAX)
• Low rDS(ON)
• Low Threshold Voltage
• Logic Level Compatible
• Small SOT-963 Surface Mount Package
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
Θ
JA
N-CH (Q1)
P-CH (Q2)
20
8.0
160
140
200
180
125
-65 to +150
1000
P-CH (Q2)
MIN TYP MAX
-
-
100
-
-
50
-
-
100
20
-
-
0.4
-
1.0
-
4.0
5.0
-
5.5
7.0
-
8.0
10
-
11
17
-
20
-
-
0.536
-
-
0.292
-
-
0.236
-
-
1.3
-
-
1.0
-
-
12
-
-
2.7
-
-
60
-
-
210
-
UNITS
V
V
mA
mA
mW
°C
°C/W
UNITS
nA
nA
nA
V
V
Ω
Ω
Ω
Ω
Ω
nC
nC
nC
S
pF
pF
pF
ns
ns
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
N-CH (Q1)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
IGSSF, IGSSR VGS=5.0V, VDS=0
-
-
100
IDSS
VDS=5.0V, VGS=0
-
-
50
IDSS
VDS=16V, VGS=0
-
-
100
BVDSS
VGS=0, ID=250μA
20
-
-
VGS(th)
VDS=VGS, ID=250μA
0.4
-
1.0
rDS(ON)
VGS=4.5V, ID=100mA
-
1.5
3.0
rDS(ON)
VGS=2.5V, ID=50mA
-
2.0
4.0
rDS(ON)
VGS=1.8V, ID=20mA
-
3.0
6.0
rDS(ON)
VGS=1.5V, ID=10mA
-
4.0
10
rDS(ON)
VGS=1.2V, ID=1.0mA
-
7.0
-
Qg(tot)
VDS=10V, VGS=4.5V, ID=100mA
-
0.458
-
Qgs
VDS=10V, VGS=4.5V, ID=100mA
-
0.176
-
Qgd
VDS=10V, VGS=4.5V, ID=100mA
-
0.138
-
gFS
VDS=5.0V, ID=125mA
-
1.3
-
Crss
VDS=15V, VGS=0, f=1.0MHz
-
2.2
-
Ciss
VDS=15V, VGS=0, f=1.0MHz
-
9.0
-
Coss
VDS=15V, VGS=0, f=1.0MHz
-
3.0
-
ton
VDD=10V, VGS=4.5V, ID=200mA -
40
-
toff
VDD=10V, VGS=4.5V, ID=200mA -
150
-
R2 (2-August 2011)