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CMRDM3575TRLEADFREE

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size415KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
Download Datasheet Parametric Compare View All

CMRDM3575TRLEADFREE Overview

Transistor

CMRDM3575TRLEADFREE Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCentral Semiconductor
package instruction,
Reach Compliance Codecompliant
Maximum drain current (Abs) (ID)0.16 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)0.125 W
surface mountYES
Base Number Matches1
CMRDM3575
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMRDM3575
consists of complementary N-Channel and P-Channel
Enhancement-mode silicon MOSFETs designed for
high speed pulsed amplifier and driver applications.
These MOSFETs offer Low rDS(ON) and Low
Threshold Voltage.
MARKING CODE: CT
SOT-963 CASE
• Device is
Halogen Free
by design
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, tp < 5.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• Power Dissipation: 125mW
• Low Package Profile: 0.5mm (MAX)
• Low rDS(ON)
• Low Threshold Voltage
• Logic Level Compatible
• Small SOT-963 Surface Mount Package
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
Θ
JA
N-CH (Q1)
P-CH (Q2)
20
8.0
160
140
200
180
125
-65 to +150
1000
P-CH (Q2)
MIN TYP MAX
-
-
100
-
-
50
-
-
100
20
-
-
0.4
-
1.0
-
4.0
5.0
-
5.5
7.0
-
8.0
10
-
11
17
-
20
-
-
0.536
-
-
0.292
-
-
0.236
-
-
1.3
-
-
1.0
-
-
12
-
-
2.7
-
-
60
-
-
210
-
UNITS
V
V
mA
mA
mW
°C
°C/W
UNITS
nA
nA
nA
V
V
Ω
Ω
Ω
Ω
Ω
nC
nC
nC
S
pF
pF
pF
ns
ns
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
N-CH (Q1)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
IGSSF, IGSSR VGS=5.0V, VDS=0
-
-
100
IDSS
VDS=5.0V, VGS=0
-
-
50
IDSS
VDS=16V, VGS=0
-
-
100
BVDSS
VGS=0, ID=250μA
20
-
-
VGS(th)
VDS=VGS, ID=250μA
0.4
-
1.0
rDS(ON)
VGS=4.5V, ID=100mA
-
1.5
3.0
rDS(ON)
VGS=2.5V, ID=50mA
-
2.0
4.0
rDS(ON)
VGS=1.8V, ID=20mA
-
3.0
6.0
rDS(ON)
VGS=1.5V, ID=10mA
-
4.0
10
rDS(ON)
VGS=1.2V, ID=1.0mA
-
7.0
-
Qg(tot)
VDS=10V, VGS=4.5V, ID=100mA
-
0.458
-
Qgs
VDS=10V, VGS=4.5V, ID=100mA
-
0.176
-
Qgd
VDS=10V, VGS=4.5V, ID=100mA
-
0.138
-
gFS
VDS=5.0V, ID=125mA
-
1.3
-
Crss
VDS=15V, VGS=0, f=1.0MHz
-
2.2
-
Ciss
VDS=15V, VGS=0, f=1.0MHz
-
9.0
-
Coss
VDS=15V, VGS=0, f=1.0MHz
-
3.0
-
ton
VDD=10V, VGS=4.5V, ID=200mA -
40
-
toff
VDD=10V, VGS=4.5V, ID=200mA -
150
-
R2 (2-August 2011)

CMRDM3575TRLEADFREE Related Products

CMRDM3575TRLEADFREE CMRDM3575BKLEADFREE
Description Transistor Transistor
Is it Rohs certified? conform to conform to
Maker Central Semiconductor Central Semiconductor
Reach Compliance Code compliant compliant
Maximum drain current (Abs) (ID) 0.16 A 0.16 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs) 0.125 W 0.125 W
surface mount YES YES
Base Number Matches 1 1

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