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S0500KC25S

Description
Symmetrical GTO SCR, 640A I(T)RMS, 2500V V(DRM), 500V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size320KB,15 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

S0500KC25S Overview

Symmetrical GTO SCR, 640A I(T)RMS, 2500V V(DRM), 500V V(RRM), 1 Element

S0500KC25S Parametric

Parameter NameAttribute value
MakerIXYS
package instructionDISK BUTTON, O-CXDB-X4
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum DC gate trigger current2000 mA
JESD-30 codeO-CXDB-X4
Number of components1
Number of terminals4
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current640 A
Off-state repetitive peak voltage2500 V
Repeated peak reverse voltage500 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeSYMMETRICAL GTO SCR
Base Number Matches1
WESTCODE
An
Date:- 26 Jul, 2005
Data Sheet Issue:- 3
IXYS
Company
Symmetrical Gate Turn-Off Thyristor
Type S0500KC25#
Absolute Maximum Ratings
MAXIMUM
LIMITS
2500
2600
100-2000
100-2000
VOLTAGE RATINGS
V
DRM
V
RSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
UNITS
V
V
V
V
RATINGS
I
TGQM
L
s
I
T(AV)M
I
T(RMS)
I
TSM
I
TSM2
It
di/dt
cr
P
FGM
P
RGM
I
FGM
V
RGM
t
off
t
on
T
jop
T
stg
2
MAXIMUM
LIMITS
500
0.3
330
640
4.0
7.2
80
1000
160
5
100
18
90
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
kA s
A/µs
W
kW
A
V
µs
µs
°C
°C
2
Maximum peak turn-off current, (note 2)
Snubber loop inductance, I
TM
=I
TGQM
, (note 2)
Mean on-state current, T
sink
=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current t
p
=10ms
Peak non-repetitive surge current, (Note 4)
I t capacity for fusing t
p
=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6)
Minimum permissible off-time, I
TM
=I
TGQM
, (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
2
Notes:-
1) V
GK
=-2Volts.
2) T
j
=125°C, V
D
=80%V
DRM
, V
DM
<V
DRM
, di
GQ
/dt=20A/µs, C
S
=1µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, t
p
=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
Data Sheet. Type S0500KC25# Issue 3
Page 1 of 15
July, 2005
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