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DD261N20K-A

Description
Rectifier Diode, 1 Phase, 2 Element, 260A, 2000V V(RRM), Silicon, MODULE-3
CategoryDiscrete semiconductor    diode   
File Size268KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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DD261N20K-A Overview

Rectifier Diode, 1 Phase, 2 Element, 260A, 2000V V(RRM), Silicon, MODULE-3

DD261N20K-A Parametric

Parameter NameAttribute value
MakerInfineon
package instructionR-XUFM-X3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.42 V
JESD-30 codeR-XUFM-X3
Maximum non-repetitive peak forward current8300 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current260 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage2000 V
Maximum reverse current40000 µA
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Base Number Matches1
N
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DD261N
DD261N
DD260N..K..-A
DD260N..K..-K
Elektrische Eigenschaften / Electrical properties
Kenndaten
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Isolations-Prüfspannung
insulation test voltage
Elektrische Eigenschaften
T
Thermische Eigenschaften
vj
= -40°C... T
vj max
V
RRM
2000
2400
2100
2500
2200 V
2600 V
2300 V
2700 V
410 A
260 A
9.500 A
8.300 A
451.000 A²s
344.000 A²s
T
vj
= +25°C... T
vj max
V
RSM
I
FRMSM
T
C
= 100°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FAVM
I
FSM
I²t
T
vj
= T
vj max
, i
F
= 800 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
, v
R
= V
RRM
RMS, f = 50 Hz, t = 1 sec
RMS, f = 50 Hz, t = 1 min
v
F
V
(TO)
r
T
i
R
V
ISOL
max.
1,42 V
0,7 V
0,68 mΩ
max.
40 mA
3,6 kV
3,0 kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Modul / per Module,
Θ
= 180° sin R
thJC
pro Zweig / per arm,
Θ
= 180° sin
pro Modul / per Module, DC
pro Zweig / per arm, DC
pro Modul / per Module
pro Zweig / per arm
R
thCH
T
vj max
T
c op
T
stg
max.
max.
max.
max.
max.
max.
0,085
0,170
0,082
0,164
°C/W
°C/W
°C/W
°C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
prepared by: C. Drilling
approved by: M.Leifeld
date of publication:
revision:
0,02 °C/W
0,04 °C/W
150 °C
- 40...+150 °C
- 40...+150 °C
14.08.03
2
BIP AC / 87-08-21, K.Spec
A20/87
Seite/page
1/9

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Description Rectifier Diode, 1 Phase, 2 Element, 260A, 2000V V(RRM), Silicon, MODULE-3 Rectifier Diode, 1 Phase, 2 Element, 260A, 2200V V(RRM), Silicon, MODULE-3 Rectifier Diode, 1 Phase, 2 Element, 260A, 2000V V(RRM), Silicon, MODULE-3 Rectifier Diode, 1 Phase, 2 Element, 260A, 2400V V(RRM), Silicon, MODULE-3 Rectifier Diode, 1 Phase, 2 Element, 260A, 2400V V(RRM), Silicon, MODULE-3 Rectifier Diode, 1 Phase, 2 Element, 260A, 2600V V(RRM), Silicon, MODULE-3 Rectifier Diode, 1 Phase, 2 Element, 260A, 2200V V(RRM), Silicon, MODULE-3 Rectifier Diode, Rectifier Diode, Rectifier Diode,
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V 1.42 V
Maximum non-repetitive peak forward current 8300 A 8300 A 8300 A 8300 A 8300 A 8300 A 8300 A 9500 A 9500 A 9500 A
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 260 A 260 A 260 A 260 A 260 A 260 A 260 A 260 A 260 A 260 A
Maximum repetitive peak reverse voltage 2000 V 2200 V 2000 V 2400 V 2400 V 2600 V 2200 V 2000 V 2600 V 2200 V
Base Number Matches 1 1 1 1 1 1 1 1 1 1
Maker Infineon Infineon Infineon Infineon Infineon Infineon Infineon - - -
package instruction R-XUFM-X3 MODULE-3 MODULE-3 MODULE-3 MODULE-3 MODULE-3 MODULE-3 - - -
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED - - -
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE - - -
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED - - -
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS - - -
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON - - -
JESD-30 code R-XUFM-X3 R-XUFM-X3 R-XUFM-X3 R-XUFM-X3 R-XUFM-X3 R-XUFM-X3 R-XUFM-X3 - - -
Number of components 2 2 2 2 2 2 2 - - -
Phase 1 1 1 1 1 1 1 - - -
Number of terminals 3 3 3 3 3 3 3 - - -
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C - - -
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED - - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - - -
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - - -
Maximum reverse current 40000 µA 40000 µA 40000 µA 40000 µA 40000 µA 40000 µA 40000 µA - - -
surface mount NO NO NO NO NO NO NO - - -
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED - - -
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER UPPER - - -
Is Samacsys - N N N N N N - - -
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