DD260N26K-K datasheet, PDF - EEWORLD Datasheet

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DD260N26K-K: DescriptionRectifier Diode,; CategoryDiscrete semiconductor diode; File Size268KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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DD260N26K-K Overview

Rectifier Diode,

DD260N26K-K Parametric

Parameter Name	Attribute value
Reach Compliance Code	compliant
ECCN code	EAR99
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.42 V
Maximum non-repetitive peak forward current	9500 A
Maximum operating temperature	150 °C
Maximum output current	260 A
Maximum repetitive peak reverse voltage	2600 V
Base Number Matches	1

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Netz-Dioden-Modul

Rectifier Diode Module

Datenblatt / Data sheet

DD261N

DD260N..K..-A

DD260N..K..-K

Elektrische Eigenschaften / Electrical properties

Kenndaten

Höchstzulässige Werte / Maximum rated values

Periodische Spitzensperrspannung

repetitive peak reverse voltages

Stoßspitzensperrspannung

non-repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Sperrstrom

reverse current

Isolations-Prüfspannung

insulation test voltage

Elektrische Eigenschaften

Thermische Eigenschaften

= -40°C... T

vj max

RRM

2000

2400

2100

2500

2200 V

2600 V

2300 V

2700 V

410 A

260 A

9.500 A

8.300 A

451.000 A²s

344.000 A²s

= +25°C... T

vj max

RSM

FRMSM

= 100°C

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

FAVM

FSM

I²t

= T

vj max

, i

= 800 A

= T

vj max

= T

vj max

= T

vj max

, v

= V

RRM

RMS, f = 50 Hz, t = 1 sec

RMS, f = 50 Hz, t = 1 min

(TO)

ISOL

max.

1,42 V

0,7 V

0,68 mΩ

max.

40 mA

3,6 kV

3,0 kV

Thermische Eigenschaften / Thermal properties

Innerer Wärmewiderstand

thermal resistance, junction to case

pro Modul / per Module,

= 180° sin R

thJC

pro Zweig / per arm,

= 180° sin

pro Modul / per Module, DC

pro Zweig / per arm, DC

pro Modul / per Module

pro Zweig / per arm

thCH

vj max

c op

stg

max.

0,085

0,170

0,082

0,164

°C/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

Höchstzulässige Sperrschichttemperatur

maximum junction temperature

Betriebstemperatur

operating temperature

Lagertemperatur

storage temperature

prepared by: C. Drilling

approved by: M.Leifeld

date of publication:

revision:

0,02 °C/W

0,04 °C/W

150 °C

- 40...+150 °C

14.08.03

BIP AC / 87-08-21, K.Spec

A20/87

Seite/page

1/9

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Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.42 V	1.42 V	1.42 V	1.42 V	1.42 V	1.42 V	1.42 V	1.42 V	1.42 V	1.42 V
Maximum non-repetitive peak forward current	9500 A	8300 A	8300 A	8300 A	8300 A	8300 A	8300 A	8300 A	9500 A	9500 A
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	260 A	260 A	260 A	260 A	260 A	260 A	260 A	260 A	260 A	260 A
Maximum repetitive peak reverse voltage	2600 V	2000 V	2200 V	2000 V	2400 V	2400 V	2600 V	2200 V	2000 V	2200 V
Base Number Matches	1	1	1	1	1	1	1	1	1	1
Maker	-	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	-	-
package instruction	-	R-XUFM-X3	MODULE-3	MODULE-3	MODULE-3	MODULE-3	MODULE-3	MODULE-3	-	-
Other features	-	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	-	-
application	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	-	-
Shell connection	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-	-
Configuration	-	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	-	-
Diode component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-	-
JESD-30 code	-	R-XUFM-X3	R-XUFM-X3	R-XUFM-X3	R-XUFM-X3	R-XUFM-X3	R-XUFM-X3	R-XUFM-X3	-	-
Number of components	-	2	2	2	2	2	2	2	-	-
Phase	-	1	1	1	1	1	1	1	-	-
Number of terminals	-	3	3	3	3	3	3	3	-	-
Minimum operating temperature	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-	-
Package body material	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-	-
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
Package form	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	-
Maximum reverse current	-	40000 µA	40000 µA	40000 µA	40000 µA	40000 µA	40000 µA	40000 µA	-	-
surface mount	-	NO	NO	NO	NO	NO	NO	NO	-	-
Terminal form	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-	-
Terminal location	-	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	-	-
Is Samacsys	-	-	N	N	N	N	N	N	-	-

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