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HLB122J

Description
NPN Triple Diffused Planar Type High Voltage Transistor
CategoryDiscrete semiconductor    The transistor   
File Size35KB,4 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
Download Datasheet Parametric View All

HLB122J Overview

NPN Triple Diffused Planar Type High Voltage Transistor

HLB122J Parametric

Parameter NameAttribute value
MakerHSMC
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.8 A
ConfigurationSingle
Minimum DC current gain (hFE)5
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)30 W
surface mountYES
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.05.08
Page No. : 1/4
HLB122J
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB122J is a medium power transistor designed for use in
switching applications.
Features
High breakdown voltage
Low collector saturation voltage
Fast switching speed
TO-252
Absolute Maximum Ratings
(Ta=25°C)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 30 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current (DC) ............................................................................................... 800 mA
IC Collector Current (Pulse) ......................................................................................... 1600 mA
IB Base Current (DC) ..................................................................................................... 100 mA
IB Base Current (Pulse).................................................................................................. 200 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
fT
Min.
600
400
6
-
-
-
-
-
-
10
5
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
400
800
1
40
-
0.6
Unit
V
V
V
uA
uA
uA
mV
mV
V
Test Conditions
IC=100uA
IC=10mA
IE=10uA
VCB=600V
VCE=400V
VEB=6V
IC=100mA, IB=20mA
IC=300mA, IB=60mA
IC=100mA, IB=20mA
VCE=10V, IC=0.1A
VCE=10V, IC=0.5A
VCC=100V, IC=0.3A, IB1=-IB2=0.06A
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
uS
HLB122J
HSMC Product Specification
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