MEMORY MODULE
FLASH Nand 512Mx8-SOP
Flash Memory
MODULE
3DFN4G08VS1636
4Gbit Flash Nand organized as 512Mx8, based on 512Mx8
Pin Assignment (Top View)
SOP 50 (Pitch : 0.50 mm) – Package D1
Features
- Organization
-Memory Cell Array (512M+16.384KM)bitx8.
- Automatic Program and Erase
Page Program: (2K+64) Byte/Bank
Block Erase: (128K+4K) Byte/Bank
- Single +3.3
0.3V power supply operation.
- Page Read Operation
Random READ: 25s (Max.)
Sequential READ: 50ns (Min.)
- Fast write Cycle Time
Program page: 300s (Typ.)
Block Erase Time: 2ms (Typ.)
Command/Address/Data Multiplexed I/O Port
- Hardware Data Protection
Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology
Endurance: 100K Program/Erase Cycles
Data Retention: 10 Years
- Command Register Operation
- Intelligent Copy-Back Operation
- Power-On auto-read enabled
General Description
The 3DFN4G08VS1636 is a 4Gbit high-density non-volatile CMOS NAND
FLASH module organized as 512Mx8bit.
Using high performance and high-reliability CMOS technology chips,
stacking with the well-known 3D Plus MCM-V technology, this FLASH
memory module provides a cost-effective solution for low power and high-
capacity non-volatile memory data storage needs, such as voice recording
and image file memory for still camera.
Each device of the module can be accessed by activating the associated
control signal (#CEn, #Wen, #Ren). A program operation programs the 2112-
bytex8 page in typical 300µs and an erase operation can be performed in
typical 2ms on a 128K-byte block. Data in the data page can be read out at
30ns cycle time per byte. The I/O pins serve as the ports for address and
data input/output as well as command input. The on-chip write controller
automates all program and erase functions including pulse repetition, where
required, and internal verification and margining of data. Even the write-
intensive system can take advantage of the 3DFN4G08VS1636 extended
reliability of 100K program/erase.
The 3DFN4G08VS1636 module is package in a 50 SOP Package and is
available for Commercial and Industrial or military temperature range.
FUNCTIONAL BLOCK DIAGRAM
(All other signals are common to the eights memories)
FLASH Memory Module
PRELIMINARY
3D Plus SA reserves the right to cancel product or specifications without notice
3DFP-0636-REV 1-AUG. 2013
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