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3SK189-6

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, CP4, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size175KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

3SK189-6 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, CP4, 4 PIN

3SK189-6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage13 V
Maximum drain current (Abs) (ID)0.05 A
Maximum drain current (ID)0.05 A
FET technologyMETAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.04 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.2 W
Minimum power gain (Gp)13 dB
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
Ordering number:ENN2671
GaAs Dual Gate MESFET
3SK189
UHF Amplifier, Mixer Application
Features
· Low noise figure : 1.2dB typ (0.8GHz).
· High voltage gain : 19dB typ (0.8GHz).
· Capable of being operated from low voltage ;
V
DS
=5V.
Package Dimensions
unit:mm
2046A
[3SK189]
0.5
1.9
0.95 0.95
0.4
4
3
0.16
0 to 0.1
1
2
0.95 0.85
2.9
0.5
0.6
1.5
2.5
1 : Drain
2 : Source
3 : Gate 1
4 : Gate 2
SANYO : CP4
0.8
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate1-to-Source Voltage
Gate2-to-Source Voltage
Drain Current
Gate1 Current
Gate2 Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDS
VG1S
VG2S
ID
IG1
IG2
PD
Tj
Tstg
Conditions
1.1
Ratings
13
+0, –3.5
±3.5
50
1
1
200
125
–55 to +125
Unit
V
V
V
mA
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Zero-Gate Voltage Drain Current
Gate2-to-Drain Current
Gate1-to-Source Leakage Current
Gate2-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Gate1-to-Source Cutoff Voltage
Gate2-to-Source Cutoff Voltage
Symbol
IDSS
IG2DO
IG1SS
IG2SS
V(BR)DSX
VG1S(off)
VG2S(off)
Conditions
VDS=5V, VG1S=VG2S=0V
VDD=13V
VG1S=–3.5V, VDS=VG2S=0V
VG2S=–3.5V, VDS=VG1S=0V
VG1S=–3.5V, VG2S=0, ID=50µA
VDS=5V, VG2S=0V, ID=200µA
VDS=5V, VG1S=0V, ID=200µA
13
–3.5
–3.5
Ratings
min
8.5
typ
max
40
50
20
20
Unit
mA
mA
µA
µA
V
V
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82599TH (KT)/3018KI, TS No.2671–1/4

3SK189-6 Related Products

3SK189-6 3SK189-3 3SK189-4 3SK189-5 3SK189-2
Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, CP4, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, CP4, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, CP4, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, CP4, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, CP4, 4 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4 4 4 4
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Shell connection SOURCE SOURCE SOURCE SOURCE SOURCE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 13 V 13 V 13 V 13 V 13 V
Maximum drain current (Abs) (ID) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
Maximum drain current (ID) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
FET technology METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.04 pF 0.04 pF 0.04 pF 0.04 pF 0.04 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e0 e0 e0 e0 e0
Number of components 1 1 1 1 1
Number of terminals 4 4 4 4 4
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
Minimum power gain (Gp) 13 dB 13 dB 13 dB 13 dB 13 dB
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1
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