3SK189-3 datasheet, PDF - EEWORLD Datasheet

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3SK189-3: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, CP4, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size175KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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3SK189-3 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, CP4, 4 PIN

3SK189-3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	13 V
Maximum drain current (Abs) (ID)	0.05 A
Maximum drain current (ID)	0.05 A
FET technology	METAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.04 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	0.2 W
Minimum power gain (Gp)	13 dB
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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Ordering number:ENN2671

GaAs Dual Gate MESFET

3SK189

UHF Amplifier, Mixer Application

Features

· Low noise figure : 1.2dB typ (0.8GHz).

· High voltage gain : 19dB typ (0.8GHz).

· Capable of being operated from low voltage ;

=5V.

Package Dimensions

unit:mm

2046A

[3SK189]

0.5

1.9

0.95 0.95

0.4

0.16

0 to 0.1

0.95 0.85

2.9

0.5

0.6

1.5

2.5

1 : Drain

2 : Source

3 : Gate 1

4 : Gate 2

SANYO : CP4

0.8

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate1-to-Source Voltage

Gate2-to-Source Voltage

Drain Current

Gate1 Current

Gate2 Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

Symbol

VDS

VG1S

VG2S

IG1

IG2

Tstg

Conditions

1.1

Ratings

+0, –3.5

±3.5

200

125

–55 to +125

Unit

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Zero-Gate Voltage Drain Current

Gate2-to-Drain Current

Gate1-to-Source Leakage Current

Gate2-to-Source Leakage Current

Drain-to-Source Breakdown Voltage

Gate1-to-Source Cutoff Voltage

Gate2-to-Source Cutoff Voltage

Symbol

IDSS

IG2DO

IG1SS

IG2SS

V(BR)DSX

VG1S(off)

VG2S(off)

Conditions

VDS=5V, VG1S=VG2S=0V

VDD=13V

VG1S=–3.5V, VDS=VG2S=0V

VG2S=–3.5V, VDS=VG1S=0V

VG1S=–3.5V, VG2S=0, ID=50µA

VDS=5V, VG2S=0V, ID=200µA

VDS=5V, VG1S=0V, ID=200µA

–3.5

Ratings

min

8.5

typ

max

Unit

µA

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82599TH (KT)/3018KI, TS No.2671–1/4

3SK189

PG, NF Specified Test Circuit

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of August, 1999. Specifications and information herein are subject to

change without notice.

PS No.2671–4/4

3SK189-3 Related Products

	3SK189-3	3SK189-4	3SK189-6	3SK189-5	3SK189-2
Description	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, CP4, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, CP4, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, CP4, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, CP4, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal Semiconductor FET, CP4, 4 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4	4	4	4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	13 V	13 V	13 V	13 V	13 V
Maximum drain current (Abs) (ID)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
Maximum drain current (ID)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
FET technology	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.04 pF	0.04 pF	0.04 pF	0.04 pF	0.04 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1
Number of terminals	4	4	4	4	4
Operating mode	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W
Minimum power gain (Gp)	13 dB	13 dB	13 dB	13 dB	13 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1

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