FW705
Ordering number : ENA1030
FW705
Features
•
•
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Composite type with a P-channel MOSFET driving from a 2.5V supply voltage contained in a single package.
High-density mounting.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Duty cycle≤1%
When mounted on ceramic substrate (1500mm
✕0.8mm)
1unit, PW≤10s
2
Conditions
Ratings
--20
±10
--6
--52
2.3
2.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
When mounted on ceramic substrate (1500mm
2
✕0.8mm),
PW≤10s
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Conditions
ID=--1mA, VGS=0V
VDS=-
-20V, VGS=0V
VGS=
±8V,
VDS=0V
VDS=-
-10V, ID=--1mA
VDS=-
-10V, ID=-
-6A
ID=--6A, VGS=--4V
ID=--3A, VGS=--2.5V
--0.4
7.8
13
30
42
40
59
Ratings
min
--20
--1
±10
--1.4
typ
max
Unit
V
µA
µA
V
S
mΩ
mΩ
Marking : W705
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Rev.0 I Page 1 of 4 I www.onsemi.com
Publication Order Number:
FW705/D
FW705
--8.0V
--6.0V
--6
ID -- VDS
--4.0V
--2.5
V
--2
.0V
--8
--7
--6
--5
--4
--3
--2
--1
0
ID -- VGS
VDS= --10V
--5
Drain Current, ID -- A
--3
--2
--5.0
V
--4
--1.5V
Drain Current, ID -- A
--1
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
25
°
C
--1.4
--1.6
VGS= --1.0V
Ta
=7
5
°
C
--25
°
C
--1.8
--2.0
Drain-to-Source Voltage, VDS -- V
100
IT09896
90
Gate-to-Source Voltage, VGS -- V
IT09897
RDS(on) -- VGS
RDS(on) -- Ta
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
90
80
70
80
70
60
50
40
30
20
10
0
--60
--6A
60
50
40
30
20
10
0
--0
--1
--2
--3
--4
--5
--6
--7
--8
ID= --3A
=
VGS
--3
I =
.5V, D
--2
A
--6A
,I =
-4.0V D
-
V GS=
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
3
IT09898
--10
7
5
3
2
--1.0
7
5
3
2
Ambient Temperature, Ta --
°C
IT09900
y
fs -- ID
IS -- VSD
VGS=0V
Forward Transfer Admittance,
y
fs -- S
2
10
5
3
2
1.0
7
5
3
2
0.1
--0.01
VDS= --10V
2
5
°
C
C
5
°
°
C
--2
75
=
Ta
Source Current, IS -- A
7
5
°
C
3
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT09901
--0.01
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
Drain Current, ID -- A
1000
7
SW Time -- ID
VDD=
--10V
VGS=
--4V
5
3
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Ta=
7
--0.1
7
5
--25
°
C
25
°
C
IT09902
Switching Time, SW Time -- ns
5
3
2
td(off)
Ciss, Coss, Crss -- pF
2
Ciss
1000
7
5
3
2
100
7
5
3
2
tf
tr
td(on)
Coss
Crss
10
--0.01
100
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
5 7 --10
IT09903
0
--5
--10
--15
--20
IT09904
Drain-to-Source Voltage, VDS -- V
Rev.0 I Page 3 of 4 I www.onsemi.com
FW705
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
2
4
6
8
10
12
14
16
18
20
VGS -- Qg
VDS= --10V
ID= --6A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
ASO
IDP= --52A
1m
s
≤10µs
ID= --6A
DC
ms
10
0m
s
10
op
era
10
tio
s
Operation in this area
is limited by RDS(on).
n(
Ta
=2
5
°
C)
--0.01
--0.01
Ta=25
°
C
Single pulse
When mounted on ceramic substrate (1500mm
2
✕0.8mm)
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2 3
Total Gate Charge, Qg -- nC
2.8
IT09906
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD (FET1) -- W
3.0
IT13258
PD -- Ta
When mounted on ceramic substrate
(1500mm
2
✕0.8mm),
PW≤10s
PD(FET1) -- PD(FET2)
When mounted on ceramic substrate
(1500mm
2
✕0.8mm),
PW≤10s
Allowable Power Dissipation, PD -- W
2.5
2.4
2.3
2.0
2.5
2.3
2.0
1.6
To
t
al
Di
t
1.2
1u
ni
ss
ip
ati
1.5
on
1.0
0.8
0.4
0
0
20
40
60
80
100
120
140
160
0.5
0
0
0.5
1.0
1.5
2.0
2.3 2.5
3.0
IT13325
Ambient Temperature, Ta --
°C
IT13259
Allowable Power Dissipation, PD (FET2) -- W
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FW705/D
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