8L 2 x 3 TDFN..........................................................................................................................................1.85W
ESD Protection on all pins .............................................................................................................................2 kV (HBM)
ESD Protection on all pins ............................................................................................................................. 200V (MM)
† Notice:
Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
2018 Microchip Technology Inc.
DS20006046A-page 3
MCP14A0303/4/5
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Input
Input Voltage Range
Logic ‘1’ High Input Voltage
Logic ‘0’ Low Input Voltage
Input Voltage Hysteresis
Input Current
Enable
Enable Voltage Range
Logic ‘1’ High Enable Voltage
Logic ‘0’ Low Enable Voltage
Enable Voltage Hysteresis
Enable Pin Pull-Up Resistance
Enable Input Current
Propagation Delay
Propagation Delay
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection Withstand
Reverse Current
Switching Time (Note
1)
Rise Time
Fall Time
Delay Time
t
R
t
F
t
D1
t
D2
Power Supply
Supply Voltage
V
DD
I
DD
Power Supply Current
I
DD
I
DD
I
DD
Note 1:
4.5
—
—
—
—
—
620
620
620
620
18
900
900
900
900
V
µA
µA
µA
µA
V
INA/B
= 3V, V
ENA/B
= 3V
V
INA/B
= 0V, V
ENA/B
= 3V
V
INA/B
= 3V, V
ENA/B
= 0V
V
INA/B
= 0V, V
ENA/B
= 0V
—
—
—
—
12
12
17
21
17
17
23
26
ns
ns
ns
ns
V
DD
= 18V, C
L
= 1800 pF,
see
Figure 4-1, Figure 4-2
V
DD
= 18V, C
L
= 1800 pF,
see
Figure 4-1, Figure 4-2
V
DD
= 18V, V
IN
= 5V,
see
Figure 4-1, Figure 4-2
V
DD
= 18V, V
IN
= 5V,
see
Figure 4-1, Figure 4-2
V
OH
V
OL
R
OH
R
OL
I
PK
I
REV
V
DD
– 0.025
—
—
—
—
0.5
—
—
2.4
1.6
3
—
—
0.025
4
3
—
—
V
V
Ω
Ω
A
A
I
OUT
= 0A
I
OUT
= 0A
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
= 18V
(Note
1)
Duty cycle
2%, t
300 µs
(Note
1)
V
EN
V
EH
V
EL
V
HYST(EN)
R
ENBL
I
EN
t
D3
t
D4
GND – 0.3V
2.0
—
—
—
—
—
—
—
1.6
1.3
0.3
1.8
12
17
21
V
DD
+ 0.3
—
0.8
—
—
—
23
26
V
V
V
V
MΩ
µA
ns
ns
V
DD
= 18V, ENB = A
GND
V
DD
= 18V, ENB = A
GND
V
DD
= 18V, V
EN
= 5V,
see
Figure 4-3
(Note
1)
V
DD
= 18V, V
EN
= 5V,
see
Figure 4-3
(Note
1)
V
IN
V
IH
V
IL
V
HYST(IN)
I
IN
GND – 0.3V
2.0
—
—
–1
—
1.6
1.3
0.3
—
V
DD
+ 0.3
—
0.8
—
+1
V
V
V
V
µA
0V
V
IN
V
DD
Sym.
Min.
Typ.
Max.
Units
Conditions
Tested during characterization, not production tested.
DS20006046A-page 4
2018 Microchip Technology Inc.
MCP14A0303/4/5
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise indicated, over the operating range with 4.5V
V
DD
18V.
Parameters
Input
Input Voltage Range
Logic ‘1’ High Input Voltage
Logic ‘0’ Low Input Voltage
Input Voltage Hysteresis
Input Current
Enable
Enable Voltage Range
Logic ‘1’ High Enable Voltage
Logic ‘0’ Low Enable Voltage
Enable Voltage Hysteresis
Enable Input Current
Propagation Delay
V
EN
V
EH
V
EL
V
HYST(EN)
I
EN
t
D3
GND – 0.3V
2.0
—
—
—
—
—
1.6
1.3
0.3
12
21
V
DD
+ 0.3
—
0.8
—
—
27
V
V
V
V
µA
ns
V
DD
= 18V, ENB = A
GND
V
DD
= 18V, V
EN
= 5V,
T
A
= +125°C, see
Figure 4-3
(Note
1)
V
DD
= 18V, V
EN
= 5V,
T
A
= +125°C, see
Figure 4-3
(Note
1)
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
IN
V
IH
V
IL
V
HYST(IN)
I
IN
GND – 0.3V
2.0
—
—
–10
—
1.6
1.3
0.3
—
V
DD
+ 0.3
—
0.8
—
+10
V
V
V
V
µA
0V
V
IN
V
DD
Sym.
Min.
Typ.
Max.
Units
Conditions
Propagation Delay
t
D4
—
25
31
ns
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Note 1:
V
OH
V
OL
R
OH
R
OL
V
DD
– 0.025
—
—
—
—
—
—
—
—
0.025
5
4
V
V
Ω
Ω
Tested during characterization, not production tested.
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