July 1998
FDP6670AL
/
FDB6670AL
N-Channel Logic Level PowerTrench
TM
MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(on)
specifications.
The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.
Features
80 A, 30 V. R
DS(ON)
= 0.0065
Ω
@ V
GS
=10 V,
R
DS(ON)
= 0.0085
Ω
@ V
GS
= 4.5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High performance trench technology for extremely low
R
DS(ON)
.
175°C maximum junction temperature rating.
_________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
(Note 1)
(Note 1)
T
C
= 25°C unless otherwise noted
FDP6670AL
30
±20
80
240
75
0.5
-65 to 175
275
FDB6670AL
Units
V
V
A
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2
62.5
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
FDP6670AL Rev.C
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
V
DD
= 15 V, I
D
= 80 A
300
80
mJ
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA, Referenced to 25
o
C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
I
D
= 250 µA, Referenced to 25 C
V
GS
= 10 V, I
D
= 40 A
T
J
= 125°C
V
GS
= 4.5 V, I
D
= 37 A
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 40 A
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
80
86
o
30
22
1
100
-100
V
mV/
o
C
µA
nA
nA
∆
BV
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
I
DSS
I
GSSF
I
GSSR
V
GS(th)
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
(Note 2)
ON CHARACTERISTICS
Gate Threshold Voltage
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
1
1.5
-5
0.005
0.0072
0.0067
3
V
mV/
o
C
∆
V
GS(th)
/
∆
T
J
R
DS(ON)
0.0065
0.0091
0.0085
Ω
A
S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
I
rr
Notes
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 1)
3200
820
400
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
Ω
15
15
85
42
27
27
105
68
50
nS
nS
nS
nS
nC
nC
nC
V
DS
= 15 V
I
D
= 40 A, V
GS
= 5 V
35
9
16
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
(Note 1)
(Note 1)
(Note1)
80
240
0.9
32
0.83
1.3
55
5
A
A
V
ns
A
V
GS
= 0 V, I
S
= 40 A
V
GS
= 0 V, I
F
= 40 A
dI
F
/dt = 100 A/µs
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
FDP6670AL Rev.C
Typical Electrical Characteristics
100
I
D
, DRAIN-SOURCE CURRENT (A)
6.0V
75
4.5V
3.0V
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
2.5
3.5V
R
DS(ON)
, NORMALIZED
2
V
GS
= 3.5V
1.5
50
4.0V
4.5V
6.0V
25
2.5V
1
10V
0
0
0.5
1
1.5
2
2.5
3
0.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
20
40
60
80
100
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate
Voltage.
0.02
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
,NORMALIZED
1.4
I
D
= 40A
V
GS
= 10V
I
D
= 40A
0.015
1.2
0.01
1
T
A
= 125°C
0.8
0.005
25°C
0.6
-50
-25
0
25
50
75
100
125
150
0
T
J
, JUNCTION TEMPERATURE (°C)
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
60
60
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 10V
I
D
, DRAIN CURRENT (A)
48
V
GS
=0V
10
TA= 125°C
1
36
25°C
-55°C
24
0.1
125°C
12
25°C
T
A
= -55°C
0.01
0
1
1.5
2
2.5
3
3.5
4
0.001
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP6670AL Rev.C
Typical Electrical Characteristics
(continued)
10
V
GS
, GATE-SOURCE VOLTAGE (V)
7000
I
D
= 40A
8
V
DS
= 5V
10V
CAPACITANCE (pF)
4000
2000
1000
500
Ciss
15V
6
Coss
Crss
f = 1 MHz
V
GS
= 0 V
0.2
0.5
1
2
5
10
30
4
2
200
0
0
10
20
Q
30
40
50
, GATE CHARGE (nC)
60
70
80
100
0.1
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
500
200
I
D
, DRAIN CURRENT (A)
100
50
20
10
5
2
1
0.5
0.3
R
DS
(O
N)
it
Lim
100
µs
10
ms
10
0m
s
1s
10s
DC
POWER (W)
3000
2500
2000
1500
1000
500
0
0.01
SINGLE PULSE
R
θ
JC
=2°C/W
T
C
= 25°C
V
GS
= 10V
SINGLE PULSE
o
R
θ
JC
= 2 C/W
T
C
= 25 °C
0.5
1
2
5
10
30
60
0.1
1
10
100
1,000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
0.3
0.2
0.1
D = 0.5
0.2
0.1
0.05
P(pk)
R
θ
JC
(t) = r(t) * R
θ
JC
R
JC
= 2°C/W
θ
0.05
0.03
0.02
0.02
0.01
Single Pulse
t
1
t
2
T
J
- T
C
= P * R
θ
JC (t)
Duty Cycle, D = t
1
/t
2
0.1
0.5
1
5
t
1
,TIME (ms)
10
50
100
500
1000
0.01
0.01
0.05
Figure 11. Transient Thermal Response Curve.
FDP6670AL Rev.C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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