MC14049B, MC14050B
Hex Buffer
The MC14049B Hex Inverter/Buffer and MC14050B Noninverting
Hex Buffer are constructed with MOS P−Channel and N−Channel
enhancement mode devices in a single monolithic structure. These
complementary MOS devices find primary use where low power
dissipation and/or high noise immunity is desired. These devices
provide logic level conversion using only one supply voltage, V
DD
.
The input−signal high level (V
IH
) can exceed the V
DD
supply
voltage for logic level conversions. Two TTL/DTL loads can be driven
when the devices are used as a CMOS−to−TTL/DTL converter
(V
DD
= 5.0 V, V
OL
≤
0.4 V, I
OL
≥
3.2 mA).
Note that pins 13 and 16 are not connected internally on these
devices; consequently connections to these terminals will not affect
circuit operation.
Features
http://onsemi.com
SOIC−16
D SUFFIX
CASE 751B
SOEIAJ−16
F SUFFIX
CASE 966
TSSOP−16
DT SUFFIX
CASE 948F
PIN ASSIGNMENT
V
DD
OUT
A
IN
A
OUT
B
IN
B
OUT
C
IN
C
V
SS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
OUT
F
IN
F
NC
OUT
E
IN
E
OUT
D
IN
D
•
•
•
•
•
•
•
High Source and Sink Currents
High−to−Low Level Converter
Supply Voltage Range = 3.0 V to 18 V
V
IN
can exceed V
DD
Meets JEDEC B Specifications
Improved ESD Protection On All Inputs
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(Voltages Referenced to V
SS
)
Symbol
V
DD
V
in
V
out
I
in
I
out
P
D
Parameter
DC Supply Voltage Range
Input Voltage Range (DC or Transient)
Output Voltage Range (DC or Transient)
Input Current (DC or Transient) per Pin
Output Current (DC or Transient) per Pin
Power Dissipation, per Package (Note 1)
(Plastic)
(SOIC)
Ambient Temperature Range
Storage Temperature Range
Lead Temperature (8−Second Soldering)
Value
−0.5 to +18.0
−0.5 to +18.0
−0.5 to V
DD
+
0.5
±
10
±
45
825
740
−55 to +125
−65 to +150
260
°C
°C
°C
Unit
V
V
V
mA
mA
mW
1
16
MARKING DIAGRAMS
16
140xxBG
AWLYWW
1
SOIC−16
16
14
050B
ALYWG
G
1
TSSOP−16
xx
A
WL, L
YY, Y
WW, W
G or
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Indicator
SOEIAJ−16
MC140xxB
ALYWG
T
A
T
stg
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Temperature Derating: See Figure 3.
This device contains protection circuitry to protect the inputs against damage
due to high static voltages or electric fields referenced to the V
SS
pin only. Extra
precautions must be taken to avoid applications of any voltage higher than the
maximum rated voltages to this high−impedance circuit. For proper operation, the
ranges V
SS
≤
V
in
≤
18 V and V
SS
≤
V
out
≤
V
DD
are recommended.
Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either V
SS
or V
DD
). Unused outputs must be left open.
©
Semiconductor Components Industries, LLC, 2014
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1
August, 2014 − Rev. 9
Publication Order Number:
MC14049B/D
MC14049B, MC14050B
ELECTRICAL CHARACTERISTICS
(Voltages Referenced to V
SS
)
–55_C
Characteristic
Output Voltage
V
in
= V
DD
“0” Level
Symbol
V
OL
V
DD
Vdc
5.0
10
15
5.0
10
15
5.0
10
15
“1” Level
(V
O
= 0.5 Vdc)
(V
O
= 1.0 Vdc)
(V
O
= 1.5 Vdc)
Output Drive Current
(V
OH
= 2.5 Vdc)
(V
OH
= 9.5 Vdc)
(V
OH
= 13.5 Vdc)
(V
OL
= 0.4 Vdc)
(V
OL
= 0.5 Vdc)
(V
OL
= 1.5 Vdc)
Input Current
Input Capacitance (V
in
= 0)
Quiescent Current (Per Package)
I
OH
Source
5.0
10
15
I
OL
5.0
10
15
15
−
5.0
10
15
5.0
10
15
–1.6
–1.6
–4.7
3.75
10
30
−
−
−
−
−
−
−
−
−
−
−
±0.1
−
1.0
2.0
4.0
–1.25
–1.30
–3.75
3.2
8.0
24
−
−
−
−
−
–2.5
–2.6
–10
6.0
16
40
±0.00001
10
0.002
0.004
0.006
−
−
−
−
−
−
±0.1
20
1.0
2.0
4.0
–1.0
–1.0
–3.0
2.6
6.6
19
−
−
−
−
−
−
−
−
−
−
−
±1.0
−
30
60
120
mAdc
V
IH
5.0
10
15
3.5
7.0
11
−
−
−
3.5
7.0
11
2.75
5.50
8.25
−
−
−
3.5
7.0
11
−
−
−
mAdc
Min
−
−
−
4.95
9.95
14.95
−
−
−
Max
0.05
0.05
0.05
−
−
−
1.5
3.0
4.0
Min
−
−
−
4.95
9.95
14.95
−
−
−
+25_C
Typ
(Note 2)
0
0
0
5.0
10
15
2.25
4.50
6.75
Max
0.05
0.05
0.05
−
−
−
1.5
3.0
4.0
+125_C
Min
−
−
−
4.95
9.95
14.95
−
−
−
Max
0.05
0.05
0.05
−
−
−
1.5
3.0
4.0
Vdc
Unit
Vdc
“1” Level
V
in
= 0
Input Voltage
(V
O
= 4.5 Vdc)
(V
O
= 9.0 Vdc)
(V
O
= 13.5 Vdc)
“0” Level
V
OH
Vdc
V
IL
Vdc
Sink
I
in
C
in
I
DD
mAdc
pF
mAdc
Total Supply Current (Notes 3 & 4)
(Dynamic plus Quiescent,
per package)
(C
L
= 50 pF on all outputs, all
buffers switching
I
T
I
T
= (1.8
mA/kHz)
f + I
DD
I
T
= (3.5
mA/kHz)
f + I
DD
I
T
= (5.3
mA/kHz)
f + I
DD
mAdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
3. The formulas given are for the typical characteristics only at +25_C
4. To calculate total supply current at loads other than 50 pF:
I
T
(C
L
) = I
T
(50 pF) + (C
L
− 50) Vfk
Where:
I
T
is in
mA
(per Package), C
L
in pF, V = (V
DD
− V
SS
) in volts, f in kHz is input frequency and k = 0.002.
http://onsemi.com
3
MC14049B, MC14050B
AC SWITCHING CHARACTERISTICS
(Note 5) (C
L
= 50 pF, T
A
= + 25_C)
Characteristic
Output Rise Time
t
TLH
= (0.7 ns/pF) C
L
+ 65 ns
t
TLH
= (0.25 ns/pF) C
L
+ 37.5 ns
t
TLH
= (0.2 ns/pF) C
L
+ 30 ns
Output Fall Time
t
THL
= (0.2 ns/pF) C
L
+ 30 ns
t
THL
= (0.06 ns/pF) C
L
+ 17 ns
t
THL
= (0.04 ns/pF) C
L
+ 13 ns
Propagation Delay Time
t
PLH
= (0.33 ns/pF) C
L
+ 63.5 ns
t
PLH
= (0.19 ns/pF) C
L
+ 30.5 ns
t
PLH
= (0.06 ns/pF) C
L
+ 27 ns
Propagation Delay Time
t
PHL
= (0.2 ns/pF) C
L
+ 30 ns
t
PHL
= (0.1 ns/pF) C
L
+ 15 ns
t
PHL
= (0.05 ns/pF) C
L
+ 12.5 ns
Symbol
t
TLH
5.0
10
15
t
THL
5.0
10
15
t
PLH
5.0
10
15
t
PHL
5.0
10
15
−
−
−
40
20
15
80
40
30
−
−
−
80
40
30
140
80
60
ns
−
−
−
40
20
15
60
40
30
ns
−
−
−
100
50
40
160
80
60
ns
V
DD
Vdc
Min
Typ
(Note 6)
Max
Unit
ns
5. The formulas given are for the typical characteristics only at 25_C.
6. Data labeled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
MC14049B
V
DD
1
I
OH
8
V
SS
V
DS
= V
OH
- V
DD
V
OH
MC14050B
V
DD
1
I
OL
8
V
SS
V
OL
MC14049B
V
DD
1
I
OL
8
V
SS
V
DD
= V
OL
V
OL
MC14050B
V
DD
1
I
OH
8
V
SS
V
OH
0
I OH , OUTPUT SOURCE CURRNT (mAdc)
V
GS
= 5.0 Vdc
- 10
160
I OL, OUTPUT SINK CURRENT (mAdc)
V
GS
= 15 Vdc
120
- 20
V
GS
= 10 Vdc
80
V
GS
= 10 Vdc
- 30
MAXIMUM CURRENT LEVEL
40
V
GS
= 5.0 Vdc
0
0
2.0
4.0
6.0
8.0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (Vdc)
10
- 40
V
GS
= 15 Vdc
MAXIMUM CURRENT LEVEL
0
- 50
- 10
- 8.0
- 6.0
- 4.0
- 2.0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (Vdc)
Figure 1. Typical Output Source Characteristics
Figure 2. Typical Output Sink Characteristics
http://onsemi.com
4
京公网安备 11010802033920号
EEWORLD
