BC556 to BC558
Vishay Semiconductors
Small Signal Transistors (PNP)
Features
• PNP Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
• These transistors are subdivided into three groups
A, B, and C according to their current gain. The
type BC556 is available in groups A and B, how-
ever, the types BC557 and BC558 can be supplied
in all three groups. As complementary types, the
NPN transistors BC546...BC548 are recom-
mended.
• On special request, these transistors are also
manufactured in the pin configuration TO-18.
C 1
2
B
1
18979
2
3
E 3
Mechanical Data
Case:
TO-92 Plastic case
Weight:
approx. 177 mg
Packaging Codes/Options:
BULK / 5 k per container 20 k/box
TAP / 4 k per Ammopack 20 k/box
Parts Table
Part
BC556A
BC556B
BC557A
BC557B
BC557C
BC558A
BC558B
BC558C
Ordering code
BC556A-BULK or BC556A-TAP
BC556B-BULK or BC556B-TAP
BC557A-BULK or BC557A-TAP
BC557B-BULK or BC557B-TAP
BC557C-BULK or BC557C-TAP
BC558A-BULK or BC558A-TAP
BC558B-BULK or BC558B-TAP
BC558C-BULK or BC558C-TAP
Remarks
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Document Number 85133
Rev. 1.2, 16-Nov-04
www.vishay.com
1
BC556 to BC558
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector - base voltage
Test condition
Part
BC556
BC557
BC558
Collector - emitter voltage
BC556
BC557
BC558
BC556
BC557
BC558
Emitter - base voltage
Collector current
Peak collector current
Peak base current
Peak emitter current
Power dissipation
1)
Symbol
- V
CBO
- V
CBO
- V
CBO
- V
CES
- V
CES
- V
CES
- V
CEO
- V
CEO
- V
CEO
- V
EBO
- I
C
- I
CM
- I
BM
I
EM
Value
80
50
30
80
50
30
65
45
30
5
100
200
200
200
500
1)
Unit
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mW
T
amb
= 25 °C
P
tot
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Maximum Thermal Resistance
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
Rθ
JA
T
j
T
S
Value
250
1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Electrical DC Characteristics
Parameter
Small signal current gain
(current gain group A)
Small signal current gain
(current gain group B)
Small signal current gain
(current gain group C)
Input impedance (current gain
group A)
Input impedance (current gain
group B)
Input impedance (current gain
group C)
Test condition
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
Part
Symbol
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
1.6
3.2
6
Min
Typ
220
330
600
2.7
4.5
8.7
18
30
60
1.5 x 10
-4
4.5
8.5
15
30
60
110
kΩ
kΩ
kΩ
µS
µS
µS
Max
Unit
Output admittance (current gain - V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
group A)
Output admittance (current gain - V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
group B)
Output admittance (current gain - V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
group C)
Reverse voltage transfer ratio
(current gain group A)
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
www.vishay.com
2
Document Number 85133
Rev. 1.2, 16-Nov-04
BC556 to BC558
Vishay Semiconductors
Parameter
Reverse voltage transfer ratio
(current gain group B)
Reverse voltage transfer ratio
(current gain group C)
DC current gain (current gain
group A)
DC current gain (current gain
group B)
DC current gain (current gain
group C)
DC current gain (current gain
group A)
DC current gain (current gain
group B)
DC current gain (current gain
group C)
DC current gain (current gain
group A)
DC current gain (current gain
group B)
DC current gain (current gain
group C)
Collector saturation voltage
Base saturation voltage
Base - voltage
Collector-emitter cut-off current
Test condition
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 10
µA
- V
CE
= 5 V, - I
C
= 10
µA
- V
CE
= 5 V, - I
C
= 10
µA
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 100 mA
- V
CE
= 5 V, - I
C
= 100 mA
- V
CE
= 5 V, - I
C
= 100 mA
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 10 mA
- V
CE
= 80 V
- V
CE
= 50 V
- V
CE
= 30 V
- V
CE
= 80 V, T
j
= 125 °C
- V
CE
= 50 V, T
j
= 125 °C
- V
CE
= 30 V, T
j
= 125 °C
BC556
BC557
BC558
BC556
BC557
BC558
Part
Symbol
h
re
h
re
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
BEsat
V
BEsat
V
BE
V
BE
I
CES
I
CES
I
CES
I
CES
I
CES
I
CES
0.2
0.2
0.2
600
110
200
420
Min
Typ
2 x 10
-4
3 x 10
-4
90
150
270
180
290
500
120
200
400
80
250
700
900
660
700
800
15
15
15
4
4
4
300
650
mV
mV
mV
mV
mV
mV
nA
nA
nA
µA
µA
µA
220
450
800
Max
Unit
Electrical AC Characteristics
Parameter
Gain bandwidth product
Collector - base capacitance
Noise figure
Test condition
- V
CE
= 5 V, - I
C
= 10 mA,
f = 100 MHz
- V
CB
= 10 V, f = 1 MHz
- V
CE
= 5 V, - I
C
= 200
µA,
R
G
= 2 kΩ, f = 1 kHz,
∆f
= 200 Hz
BC556
Part
Symbol
f
T
C
CBO
F
2
Min
Typ
150
6
10
Max
Unit
MHz
pF
dB
BC557
BC558
F
F
2
2
10
10
dB
dB
Document Number 85133
Rev. 1.2, 16-Nov-04
www.vishay.com
3
BC556 to BC558
Vishay Semiconductors
Typical Characteristics (T
amb
= 25
°C
unless otherwise specified)
P - Admissible Power Dissipation (mW)
tot
500
-I CBO - Collector-Base Cut-off Current (nA)
10000
1000
100
10
test
voltage
-
V
CBO :
400
300
200
100
0
0 20 40 60
80
100 120 140 160 180 200
Tamb - Ambient Temperature (°C)
1
0.1
equal to the given
maximum
value
-
V
CEO
typical
maximum
0
19181
19184
20 40 60
80
100 120 140 160 180 200
Tamb - Ambient Temperature (°C)
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Figure 4. Collector-Base Cut-off Current vs. Ambient Temperature
1000
hFE - DC Current Gain
-VCE = 5
V
100 °C
T amb = 25 °C
- 50 °C
100
-V = 5
V
CE
I C - Collector Current (mA)
100
10
25 °C
10
1
Tamb = 100 °C
-50 °C
1
0.01
19183
0.1
10
0.1
1
IC - Collector Current (mA)
100
19185
0
0.5
V
- Base-Ermitter
Voltage
(V)
BE
1
Figure 2. DC Current Gain vs. Collector Current
Figure 5. Collector Current vs. Base-Emitter Voltage
r thA - Pulse Thermal Resistance (°C/W
)
CEBO / CCBO - Collector / Emitter
Base Capacitance (pF)
1000
20
T amb = 25 °C
100
0.2
0.1
0.05
0.02
10
0.01
0.005
10
C CBO
CEBO
1
½
=0
tp
½=
tp
T
P
I
19182
T
0.1
-6
10
10
-5
10
-4
10
-3
10
-2
10
-1
1
t p - Pulse Length (s)
10 100
19186
0
10
0.1
1
-V
, -VEBO - Reverse Bias
Voltage
(V)
CBO
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. Collector-Base Capacitance, Emitter-Base Capacitance
vs. Bias Voltage
www.vishay.com
4
Document Number 85133
Rev. 1.2, 16-Nov-04
BC556 to BC558
Vishay Semiconductors
-V
CEsat - Collector Saturation
Voltage
(V)
0.5
0.4
0.3
-I C /-I B = 2 0
0.2
Tamb = 100 °C
25 °C
0.1
- 50 °C
19187
0
0.1
10
1
IC - Collector Current (mA)
100
Figure 7. Collector Saturation Voltage vs. Collector Current
100
he(IC ) / h e(-IC = 2 mA)
-V CE = 5
V
Tamb = 25 °C
10
h ie
h re
1
h fe
hoe
0.1
0.1
19188
1
I C - Collector Current (mA)
10
Figure 8. Relative h-Parameters vs. Collector Current
1000
f r - Gain-Bandwidth Product (MHz)
Tamb = 25 °C
-V CE = 10
V
5
V
100
2
V
10
0.1
19189
1
10
100
I C - Collector Current (mA)
Figure 9. Gain-Bandwidth Product vs. Collector Current
Document Number 85133
Rev. 1.2, 16-Nov-04
www.vishay.com
5
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