datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > storage> storage> MC-4R64FKE8D-845
PDF
Preview

MC-4R64FKE8D-845

Description
Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT)
Categorystorage    storage   
File Size135KB，14 Pages
ManufacturerELPIDA
Websitehttp://www.elpida.com/en
Download Datasheet Parametric Compare View All

MC-4R64FKE8D-845 Overview

Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT)

MC-4R64FKE8D-845 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerELPIDA
Parts packaging codeDMA
package instructionDIMM, DIMM184,40
Contacts184
Reach Compliance Codeunknow
ECCN codeEAR99
access modeBLOCK ORIENTED PROTOCOL
Maximum access time45 ns
Other featuresSELF CONTAINED REFRESH
Maximum clock frequency (fCLK)800 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N184
memory density603979776 bi
Memory IC TypeRAMBUS DRAM MODULE
memory width18
Humidity sensitivity level1
Number of functions1
Number of ports1
Number of terminals184
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
organize32MX18
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM184,40
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)225
power supply1.8/2.5,2.5 V
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)2.63 V
Minimum supply voltage (Vsup)2.37 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyMOS
Terminal formNO LEAD
Terminal pitch1 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

Preview

Download Datasheet
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4R64FKE8D
Direct Rambus DRAM RIMM
TM
Module
64M-BYTE (32M-WORD x 18-BIT)
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R64FKE8D modules consists of two 288M Direct Rambus DRAM (Direct RDRAM) devices (
µ
PD488588).
These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and
board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
•
184 edge connector pads with 1mm pad spacing
•
64 MB Direct RDRAM storage
•
Each RDRAM
has 32 banks, for 64 banks total on module
•
Gold plated contacts
•
RDRAMs use Chip Scale Package (CSP)
•
Serial Presence Detect support
•
Operates from a 2.5 V supply
•
Powerdown self refresh modes
•
Separate Row and Column buses for higher efficiency
•
Over Drive Factor (ODF) support
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0080N20 (Ver 2.0)
Date Published June 2002 (K) Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2001-2002
NEC
Corporation. 2000
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

MC-4R64FKE8D-845 Related Products

MC-4R64FKE8D-845 MC-4R64FKE8D-745 MC-4R64FKE8D-653 MC-4R64FKE8D
Description Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT) Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT) Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT) Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT)
Is it Rohs certified? incompatible incompatible incompatible -
Maker ELPIDA ELPIDA ELPIDA -
Parts packaging code DMA DMA DMA -
package instruction DIMM, DIMM184,40 DIMM, DIMM184,40 DIMM, DIMM184,40 -
Contacts 184 184 184 -
Reach Compliance Code unknow unknow unknow -
ECCN code EAR99 EAR99 EAR99 -
access mode BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL -
Maximum access time 45 ns 45 ns 53 ns -
Other features SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH -
Maximum clock frequency (fCLK) 800 MHz 711 MHz 600 MHz -
I/O type COMMON COMMON COMMON -
JESD-30 code R-XDMA-N184 R-XDMA-N184 R-XDMA-N184 -
memory density 603979776 bi 603979776 bi 603979776 bi -
Memory IC Type RAMBUS DRAM MODULE RAMBUS DRAM MODULE RAMBUS DRAM MODULE -
memory width 18 18 18 -
Humidity sensitivity level 1 1 1 -
Number of functions 1 1 1 -
Number of ports 1 1 1 -
Number of terminals 184 184 184 -
word count 33554432 words 33554432 words 33554432 words -
character code 32000000 32000000 32000000 -
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS -
organize 32MX18 32MX18 32MX18 -
Output characteristics 3-STATE 3-STATE 3-STATE -
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED -
encapsulated code DIMM DIMM DIMM -
Encapsulate equivalent code DIMM184,40 DIMM184,40 DIMM184,40 -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR -
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY -
Peak Reflow Temperature (Celsius) 225 225 225 -
power supply 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V -
Certification status Not Qualified Not Qualified Not Qualified -
self refresh YES YES YES -
Maximum supply voltage (Vsup) 2.63 V 2.63 V 2.63 V -
Minimum supply voltage (Vsup) 2.37 V 2.37 V 2.37 V -
Nominal supply voltage (Vsup) 2.5 V 2.5 V 2.5 V -
surface mount NO NO NO -
technology MOS MOS MOS -
Terminal form NO LEAD NO LEAD NO LEAD -
Terminal pitch 1 mm 1 mm 1 mm -
Terminal location DUAL DUAL DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -

Recommended Resources

Shortcut:   00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components

  1. 177-706H51-2S0J1-18M-S
  2. MOAZ5500C
  3. CRCW08056M20FKEA
  4. PP78R1.215400
  5. GUS-SS7B-01-2941-BC
  6. ICRA20S33M8G318CE
  7. ATS-20D-22-C2-R0
  8. RHC1210K8453FB
  9. AME8810EEGT
  10. A2541WV-2x3P-D241-G30
  11. CR2010B17R2D501W
  12. SSP61CC3302MR

Popular Articles

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 2527  1613  945  118  2818  51  33  20  3  57 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号