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MC-4R64FKE8D

Description
Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT)
File Size135KB,14 Pages
ManufacturerELPIDA
Websitehttp://www.elpida.com/en
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MC-4R64FKE8D Overview

Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT)

DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4R64FKE8D
Direct Rambus DRAM RIMM
TM
Module
64M-BYTE (32M-WORD x 18-BIT)
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R64FKE8D modules consists of two 288M Direct Rambus DRAM (Direct RDRAM) devices (
µ
PD488588).
These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and
board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
184 edge connector pads with 1mm pad spacing
64 MB Direct RDRAM storage
Each RDRAM
has 32 banks, for 64 banks total on module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 V supply
Powerdown self refresh modes
Separate Row and Column buses for higher efficiency
Over Drive Factor (ODF) support
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0080N20 (Ver 2.0)
Date Published June 2002 (K) Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2001-2002
NEC
Corporation. 2000
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

MC-4R64FKE8D Related Products

MC-4R64FKE8D MC-4R64FKE8D-745 MC-4R64FKE8D-845 MC-4R64FKE8D-653
Description Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT) Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT) Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT) Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT)
Is it Rohs certified? - incompatible incompatible incompatible
Maker - ELPIDA ELPIDA ELPIDA
Parts packaging code - DMA DMA DMA
package instruction - DIMM, DIMM184,40 DIMM, DIMM184,40 DIMM, DIMM184,40
Contacts - 184 184 184
Reach Compliance Code - unknow unknow unknow
ECCN code - EAR99 EAR99 EAR99
access mode - BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL
Maximum access time - 45 ns 45 ns 53 ns
Other features - SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH
Maximum clock frequency (fCLK) - 711 MHz 800 MHz 600 MHz
I/O type - COMMON COMMON COMMON
JESD-30 code - R-XDMA-N184 R-XDMA-N184 R-XDMA-N184
memory density - 603979776 bi 603979776 bi 603979776 bi
Memory IC Type - RAMBUS DRAM MODULE RAMBUS DRAM MODULE RAMBUS DRAM MODULE
memory width - 18 18 18
Humidity sensitivity level - 1 1 1
Number of functions - 1 1 1
Number of ports - 1 1 1
Number of terminals - 184 184 184
word count - 33554432 words 33554432 words 33554432 words
character code - 32000000 32000000 32000000
Operating mode - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
organize - 32MX18 32MX18 32MX18
Output characteristics - 3-STATE 3-STATE 3-STATE
Package body material - UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code - DIMM DIMM DIMM
Encapsulate equivalent code - DIMM184,40 DIMM184,40 DIMM184,40
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) - 225 225 225
power supply - 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V
Certification status - Not Qualified Not Qualified Not Qualified
self refresh - YES YES YES
Maximum supply voltage (Vsup) - 2.63 V 2.63 V 2.63 V
Minimum supply voltage (Vsup) - 2.37 V 2.37 V 2.37 V
Nominal supply voltage (Vsup) - 2.5 V 2.5 V 2.5 V
surface mount - NO NO NO
technology - MOS MOS MOS
Terminal form - NO LEAD NO LEAD NO LEAD
Terminal pitch - 1 mm 1 mm 1 mm
Terminal location - DUAL DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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