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MC-4R64CEE6B

Description
Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT
File Size118KB,16 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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MC-4R64CEE6B Overview

Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT

PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4R64CEE6B, 4R64CEE6C
Direct Rambus
TM
DRAM RIMM
TM
Module
64M-BYTE (32M-WORD x 16-BIT)
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R64CEE6B, 4R64CEE6C modules consists of four 128M Direct Rambus DRAM (Direct RDRAM™) devices
(
µ
PD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of
Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using
conventional system and board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
184 edge connector pads with 1mm pad spacing
64 MB Direct RDRAM storage
Each RDRAM
®
has 32 banks, for 128 banks total on module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 V supply
Low power and powerdown self refresh modes
Separate Row and Column buses for higher efficiency
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14537EJ1V1DS00 (1st edition)
Date Published November 1999 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
©
1999

MC-4R64CEE6B Related Products

MC-4R64CEE6B MC-4R64CEE6C-745 MC-4R64CEE6C-845 MC-4R64CEE6B-653 MC-4R64CEE6C-653 MC-4R64CEE6C MC-4R64CEE6B-845 MC-4R64CEE6B-745
Description Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT
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