MBR20040CT datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > semiconductor> Discrete semiconductor> MBR20040CT

Preview

MBR20040CT: Description100 A, 40 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size240KB，3 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

Download Datasheet Compare View All

MBR20040CT Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	MBR20040CT	-	-	View	Buy Now

MBR20040CT Overview

100 A, 40 V, SILICON, RECTIFIER DIODE

Preview

Download Datasheet

View All

MCC

Features

•

MBR20020CT

omponents

21201 Itasca Street Chatsworth

!"#

$ % !"#

THRU

MBR200100CT

200

Amp

Schottky Barrier

Rectifier

20

to 100 Volts

FULL PACK

Metal of siliconrectifier, majonty carrier conducton

Guard ring for transient protection

Low power loss high efficiency

High surge capacity, High current capability

Maximum Ratings

•

Operating Temperature: -55°C to +175°C

Storage Temperature: -55°C to +175°C

Maximum

Recurrent

Peak Reverse

Voltage

20V

30V

35V

40V

45V

60V

80V

100V

Maximum DC

Blocking

Voltage

20V

30V

35V

40V

45V

60V

80V

100V

MCC

Part Number

MBR20020CT

MBR20030CT

MBR20035CT

MBR20040CT

MBR20045CT

MBR20060CT

MBR20080CT

MBR200100CT

Maximum

RMS Voltage

14V

21V

24.5V

28V

31.5V

42V

56V

70V

A

B

K

C

M

J

F

D

H

E

L

G

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

20020-20045CT

20060CT

20080-200100CT

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Typical Junction

Capacitance

I

F(AV)

I

FSM

200

A

1500A

T

C

=

136°C

8.3ms, half sine

DIM

A

B

C

D

E

F

G

H

J

K

L

M

DIMENSIONS

INCH ES

MIN

MAX

3.150

NOM

1.565

1.585

.700

.800

2.400

2.500

.119

.132

1.375 REF

3.550

3.650

.580

.620

1/4 -20 UNF

.380

.410

.185

.195

.275

.295

MM

MIN

MAX

80.01

NOM

39.75

40.26

17.78

20.32

60.96

63.50

3.02

3.35

34.92 REF

90.17

92.71

14.73

15.75

FULL

9.65

10.41

4.70

4.95

6.99

7.49

NOTE

V

F

.68 V

.75 V

.84 V

5

mA

75

mA

I

FM

=

100

A;

T

J

= 25°C

I

R

T

J

= 25°C

T

J

=

125°C

∅

C

J

4600pF

Measured at

1.0MHz, V

R

=5.0V

*Pulse Test: Pulse Width 300µsec, Duty Cycle

2%

www.mccsemi.com

MBR20040CT Related Products

	MBR20040CT	MBR20060CT	MBR20045CT	MBR20080CT	MBR20035CT	MBR200100CT	MBR20030CT	MBR20020CT
Description	100 A, 40 V, SILICON, RECTIFIER DIODE	150 A, 60 V, SILICON, RECTIFIER DIODE	100 A, 45 V, SILICON, RECTIFIER DIODE	100 A, 80 V, SILICON, RECTIFIER DIODE	100 A, 35 V, SILICON, RECTIFIER DIODE	100 A, 100 V, SILICON, RECTIFIER DIODE	100 A, 30 V, SILICON, RECTIFIER DIODE	150 A, 60 V, SILICON, RECTIFIER DIODE

Recommended Resources

Characteristics and advantages and disadvantages analysis of linear regulated power supply

Anbaolu AA-18 computerized barbecue microwave oven circuit diagram

High linearity sawtooth wave generator circuit diagram

Automatic temperature control circuit for electric heating appliances

Charging circuit composed of LTC4052

875p computer motherboard circuit diagram_048

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components