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MBR20045CT

Description
100 A, 45 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size240KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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MBR20045CT Overview

100 A, 45 V, SILICON, RECTIFIER DIODE

MCC
Features
MBR20020CT
  omponents
21201 Itasca Street Chatsworth

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THRU
MBR200100CT
200
Amp
Schottky Barrier
Rectifier
20
to 100 Volts
FULL PACK
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
Maximum Ratings
Operating Temperature: -55°C to +175°C
Storage Temperature: -55°C to +175°C
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Maximum DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
MCC
Part Number
MBR20020CT
MBR20030CT
MBR20035CT
MBR20040CT
MBR20045CT
MBR20060CT
MBR20080CT
MBR200100CT
Maximum
RMS Voltage
14V
21V
24.5V
28V
31.5V
42V
56V
70V
A
B
K
C
M
J
F
D
H
E
L
G
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
20020-20045CT
20060CT
20080-200100CT
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
I
F(AV)
I
FSM
200
A
1500A
T
C
=
136°C
8.3ms, half sine
DIM
A
B
C
D
E
F
G
H
J
K
L
M
DIMENSIONS
INCH ES
MIN
MAX
3.150
NOM
1.565
1.585
.700
.800
2.400
2.500
.119
.132
1.375 REF
3.550
3.650
.580
.620
1/4 -20 UNF
.380
.410
.185
.195
.275
.295
MM
MIN
MAX
80.01
NOM
39.75
40.26
17.78
20.32
60.96
63.50
3.02
3.35
34.92 REF
90.17
92.71
14.73
15.75
FULL
9.65
10.41
4.70
4.95
6.99
7.49
NOTE
V
F
.68 V
.75 V
.84 V
5
mA
75
mA
I
FM
=
100
A;
T
J
= 25°C
I
R
T
J
= 25°C
T
J
=
125°C
C
J
4600pF
Measured at
1.0MHz, V
R
=5.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle
2%
www.mccsemi.com

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MBR20045CT MBR20060CT MBR20080CT MBR20040CT MBR20035CT MBR200100CT MBR20030CT MBR20020CT
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