Data Sheet
May 2002
L8583D Line Card Access Switch
Features
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Small size/surface-mount packaging
Monolithic IC reliability
Low impulse noise
Make-before-break, break-before-make operation
Clean, bounce-free switching
Low, matched on-resistance
Built-in current limiting, thermal shutdown, and
SLIC protection
5 V only operation, very low power consumption
Battery monitor, all-off state upon loss of battery
No EMI
Latched logic level inputs, no driver circuitry
Only one external protector required
The L8583D has eight states: the idle talk state (line
break switches closed, all other switches open), the
power ringing state (ringing access switches closed,
all other switches open), loop access state (loop
access switches closed, all switches open), SLIC test
state (test in switches closed, all other switches
open), simultaneous loop and SLIC access state
(loop and test in switches closed, all others open),
ringing generator test state (ring test switches
closed, all others open), simultaneous test-out and
ring-test state (ring and test out switches closed),
and an all-off state. The L8583D is appropriate for
central office, access, digital loop carrier, and other
Telcordia Technologies™
TR-57 applications.
The L8583D offers break-before-make or make-
before-break switching, with simple logic-level input
control. Because of the solid-state construction, volt-
age transients generated when switching into an
inductive ringing lead during ring cadence or ring trip
are minimized, possibly eliminating the need for
external zero cross switching circuitry. State control is
via logic level inputs, so no additional driver circuitry
is required.
The line break switch is a linear switch that has
exceptionally low on-resistance and an excellent
on-resistance matching characteristic. The ringing
access switch has a breakdown voltage rating
>480 V which is sufficiently high, with proper protec-
tion, to prevent breakdown in the presence of a tran-
sient fault condition (i.e., passing the transient on to
the ringing generator).
The L8583D provides an integrated diode bridge
along with current limiting and thermal shutdown for
protection of the device itself and the subsequent
subscriber line integrated circuit (SLIC). For LCAS
protection, power cross is reduced by the current-
limiting and thermal shutdown circuits and lightning
reduced by the current-limit circuit. Residue faults are
shunted from the SLIC by the diode bridge.
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Applications
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Central office
DLC
PBX
DAML
HFC/FITL
Description
The Agere Systems Inc. L8583D line card access
switch is a monolithic solid-state device providing
the equivalent switching functionality of three 2-form
C switches. The L8583D is designed to provide
power ringing access, line test access (test out), and
SLIC test access (test in) to tip and ring in central
office, digital loop carrier, private branch exchange,
digitally added main line, and hybrid fiber coax/fiber-
in-the-loop analog line card applications. An addi-
tional pair of solid-state contacts are also available to
provide access for testing of the ringing generator.
L8583D Line Card Access Switch
Data Sheet
May 2002
Description
(continued)
To protect the L8583D from an overvoltage fault condi-
tion, use of a secondary protector is required. The
secondary protector must limit the voltage seen at the
tip/ring terminals to prevent the breakdown voltage of
the switches from being exceeded. To minimize stress
on the solid-state contacts, use of a foldback-type or
crowbar-type secondary protector is recommended.
Please contact your Agere account representative for a
choice of recommended secondary protection device.
With proper choice of secondary protection, a line card
using the L8583D will meet all relevant ITU-T, LSSGR,
FCC, or
UL
®
protection requirements.
The L8583D operates off of a 5 V supply only. This
gives the device extremely low idle and active power
dissipation and allows use with virtually any range of
battery voltage. This makes the L8583D especially
appropriate for remote power applications such as
DAML or FOC/FITL or other
Telcordia Technologies
GR 909 applications where power dissipation is partic-
ularly critical.
A battery voltage is also used by the L8583D, only as a
reference for the integrated protection circuit. The
L8583D will enter an all-off state upon loss of battery.
During power ringing, to turn on and maintain the on
state, the ring access switch and ring test switch will
draw a nominal 2 mA from the ring generator.
The L8583D device is packaged in a 20-pin plastic
SOG (L8583DEY) and a 28-pin plastic SOG
(L8583DAE). See Figure 1 for an illustration of the
20-pin package and Figure 2 for an illustration of the
28-pin package.
Pin Information
F
GND
T
TESTin
T
BAT
T
LINE
T
RINGING
T
TESTout
NC
V
DD
T
SD
1
SW1
SW2
20 V
BAT
19 R
TESTin
18 R
BAT
SW3
SW4
SW6
SW5
2
3
4
5
SW7
SW8
SW10
17 R
LINE
16 R
RINGING
6
7
8
9
SW9
15 R
TESTout
14 LATCH
CONTROL
LOGIC
13 IN
TESTin
12 IN
RING
11 IN
TESTout
D
GND
10
1670
Figure 1. 20-Pin Plastic SOG
F
GND
NC
NC
NC
T
TESTin
T
BAT
T
LINE
T
RINGING
NC
1
2
3
4
SW1
SW2
28 V
BAT
27 NC
26 NC
25 NC
24 R
TESTin
23 R
BAT
SW3
SW5
SW6
SW7
SW4
5
6
7
8
9
SW8
SW9
SW10
22 R
LINE
21 NC
20 R
RINGING
19 R
TESTout
18 LATCH
T
TESTout
10
NC 11
V
DD
12
T
SD
13
D
GND
14
CONTROL
LOGIC
17 IN
TESTin
16 IN
RING
15 IN
TESTout
12-2365 (F).d
Figure 2. 28-Pin Plastic SOG
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Data Sheet
May 2002
L8583D Line Card Access Switch
Pin Information
(continued)
Table 1. Pin Descriptions
20-Pin SOG 28-Pin SOG Symbol
*
Description
1
1
F
GND
Fault ground.
2
5
T
TESTin
Test (in) access on TIP.
3
6
T
BAT
Connect to TIP on SLIC side.
4
7
T
LINE
Connect to TIP on line side.
5
8
T
RINGING
Connect to return ground for ringing generator.
6
10
T
TESTout
Test (out) access on TIP.
7
2, 3, 4, 9, 11,
NC
No connection.
21, 25, 26, 27
5 V supply.
8
12
V
DD
9
13
T
SD
Temperature shutdown pin. Can be used as a logic level input or an out-
put. See Table 16 and the Switching Behavior section of this data sheet
for input pin description. As an output flag, this pin will read 5 V when the
device is in its operational mode and 0 V in the thermal shutdown mode.
To disable the thermal shutdown mechanism, tie this pin to 5 V (not rec-
ommended).
10
14
D
GND
Digital ground.
11
15
IN
TESTout
u
Logic level switch input control.
12
16
IN
RING
u
Logic level switch input control.
13
17
IN
TESTin
d
Logic level switch input control.
14
18
LATCH
d
Data input control, active-high, transparent low.
15
19
R
TESTout
Test (out) access on RING.
16
20
R
RINGING
Connect to ringing generator.
17
22
R
LINE
Connect to RING on line side.
18
23
R
BAT
Connect to RING on SLIC side.
19
24
R
TESTin
Test (in) access on RING.
20
28
V
BAT
Battery voltage. Used as a reference for protection circuit.
* u = 75K typical pull-up resistor.
d = 75K typical pull-down resistor.
3
L8583D Line Card Access Switch
Data Sheet
May 2002
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-
lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability.
Table 2. Absolute Maximum Ratings
Parameter
Operating Temperature Range
Storage Temperature Range
Relative Humidity Range
Pin Soldering Temperature (t = 10 s max)
5 V Power Supply
Battery Supply
Logic Input Voltage
Input-to-output Isolation
Pole-to-pole Isolation
Min
–40
–40
5
—
—
—
—
—
—
Max
110
150
95
260
7
–85
7
330
330
Unit
°C
°C
%
°C
V
V
V
V
V
Handling Precautions
Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions
must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test
operations. Agere employs both a human-body model (HBM) and a charged-device model (CDM) qualification
requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresh-
olds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Table 3. HBM ESD Threshold Voltage
Device
L8583D
Rating
1000 V
4
Data Sheet
May 2002
L8583D Line Card Access Switch
Electrical Characteristics
T
A
= –40 °C to +85 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are
the result of engineering evaluations. Typical values are for information purposes only and are not part of the test-
ing requirements.
Table 4. Power Supply Specifications
Supply
V
DD
Min
4.5
Typ
5
Max
5.5
Unit
V
Supply
V
BAT
*
Min
–19
Typ
—
Max
–72
Unit
V
* V
BAT
is used only as a reference for internal protection circuitry. If V
BAT
rises above –10 V, the device will enter an all-off state and remain in
this state until the battery voltage drops below –15 V.
Table 5. Test In Switches, 1 and 2
Parameter
Off-state Leakage Current:
+25 °C
+85 °C
–40 °C
On-resistance:
+25 °C
+85 °C
–40 °C
Isolation:
+25 °C
+85 °C
–40 °C
dV/dt Sensitivity*
Test Condition
Vswitch (differential) = –320 V to Gnd
Vswitch (differential) = –60 V to +260 V
Vswitch (differential) = –330 V to Gnd
Vswitch (differential) = –60 V to +270 V
Vswitch (differential) = –310 V to Gnd
Vswitch (differential) = –60 V to +250 V
Iswitch (on) = ±5 mA, ±10 mA
Iswitch (on) = ±5 mA, ±10 mA
Iswitch (on) = ±5 mA, ±10 mA
Vswitch (both poles) = ±320 V,
logic inputs = Gnd
Vswitch (both poles) = ±330 V,
logic inputs = Gnd
Vswitch (both poles) = ±310 V,
logic inputs = Gnd
—
Measure
Iswitch
Iswitch
Iswitch
Min Typ Max
—
—
—
—
—
—
1
1
1
Unit
µA
µA
µA
∆
V
ON
∆
V
ON
∆
V
ON
Iswitch
Iswitch
Iswitch
—
—
—
—
—
—
—
—
49
—
37
—
—
—
200
—
77
—
1
1
1
—
Ω
Ω
Ω
µA
µA
µA
V/µs
* Applied voltage is 100 Vp-p square wave at 100 Hz.
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