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3SK294(TE85L)

Description
TRANSISTOR,MOSFET,N-CHANNEL,12.5V V(BR)DSS,30MA I(D),SO
CategoryDiscrete semiconductor    The transistor   
File Size284KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

3SK294(TE85L) Overview

TRANSISTOR,MOSFET,N-CHANNEL,12.5V V(BR)DSS,30MA I(D),SO

3SK294(TE85L) Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeDUAL GATE, ENHANCEMENT MODE
Maximum operating temperature125 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.1 W
surface mountYES
Base Number Matches1
3SK294
TOSHIBA Field Effect Transistor
Silicon N-Channel Dual Gate MOS Type
3SK294
TV Tuner, VHF RF Amplifier Application
Superior cross modulation performance
Low reverse transfer capacitance: C
rss
= 20 fF (typ.)
Low noise figure: NF = 1.4dB (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate 1-source voltage
Gate 2-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
G1S
V
G2S
I
D
P
D
T
ch
T
stg
Rating
12.5
±8
±8
30
100
125
−55
to 125
Unit
V
V
V
mA
mW
°C
°C
1.Drain
2.Source
3.Gate1
4.Gate2
USQ
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2K1B
reliability significantly even if the operating conditions (i.e.
Weight: 6 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate 1 leakage current
Gate 2 leakage current
Drain-source voltage
Drain current
Gate 1-source cut-off voltage
Gate 2-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
I
G1SS
I
G2SS
V
(BR) DSX
I
DSS
V
G1S (OFF)
V
G2S (OFF)
⎪Y
fs
C
iss
C
rss
G
ps
NF
Test Condition
V
DS
=
0, V
G1S
= ±6
V, V
G2S
=
0
V
DS
=
0, V
G1S
=
0, V
G2S
= ±6
V
V
G1S
= −0.5
V, V
G2S
= −0.5
V,
I
D
=
100
μA
V
DS
=
6 V, V
G1S
=
0, V
G2S
=
4.5 V
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
100
μA
V
DS
=
6 V, V
G1S
=
4.0 V, I
D
=
100
μA
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
10 mA,
f
=
1 kHz
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
10 mA,
f
=
1 MHz
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
10 mA,
f
=
500 MHz (Figure 1)
Min
12.5
0.3
0.5
19.5
23.5
Typ.
0.9
1.0
23.5
2.5
20
26.0
1.4
Max
±50
±50
0.1
1.3
1.5
3.1
40
2.5
Unit
nA
nA
V
mA
V
V
mS
pF
fF
dB
dB
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