MBM29F033C-90 datasheet, PDF - EEWORLD Datasheet

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MBM29F033C-90: Description32M (4M X 8) BIT; File Size286KB，46 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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MBM29F033C-90 Overview

32M (4M X 8) BIT

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FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20869-3E

FLASH MEMORY

CMOS

32M (4M

8) BIT

MBM29F033C

-70/-90/-12

FEATURES

• Single 5.0 V read, write, and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Pinout and software compatible with single-power supply Flash

Superior inadvertent write protection

• 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)

• Minimum 100,000 write/erase cycles

• High performance

70 ns maximum access time

• Sector erase architecture

Uniform sectors of 64K bytes each

Any combination of sectors can be erased. Also supports full chip erase

• Embedded Erase

Algorithms

Automatically preprograms and erases the chip or any sector

• Embedded Program

Algorithms

Automatically programs and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/BUSY output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Low V

write inhibit

≤

3.2 V

• Hardware RESET pin

Resets internal state machine to the read mode

• Erase Suspend/Resume

Supports reading or programming data to a sector not being erased

• Sector group protection

Hardware method that disables any combination of sector groups from write or erase operation (a sector group

consists of 4 adjacent sectors of 64K bytes each)

• Temporary sector groups unprotection

Hardware method temporarily enable any combination of sectors from write or erase operations

Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc.

MBM29F033C

-70/-90/-12

GENERAL DESCRIPTION

The MBM29F033C is a 32M-bit, 5.0 V-Only Flash memory organized as 4M bytes of 8 bits each. The 2M bytes

of data is divided into 64 sectors of 64K bytes for flexible erase capability. The 8 bit of data will appear on DQ

to DQ

. The MBM29F033C is offered in a 40-pin TSOP package. This device is designed to be programmed in-

system with the standard system 5.0 V V

supply. A 12.0 V V

is not required for program or erase operations.

The device can also be reprogrammed in standard EPROM programmers.

The standard MBM29F033C offers access times between 70 ns and 120 ns allowing operation of high-speed

microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write

enable (WE), and output enable (OE) controls.

The MBM29F033C is command set compatible with JEDEC standard single-supply Flash standard. Commands

are written to the command register using standard microprocessor write timings. Register contents serve as

input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally

latch addresses and data needed for the programming and erase operations. Reading data out of the device is

similar to reading from 12.0 V Flash or EPROM devices.

The MBM29F033C is programmed by executing the program command sequence. This will invoke the Embedded

Program

Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies

proper cell margin. Each sector can be programmed and verified in less than 0.5 seconds. Erase is accomplished

by executing the erase command sequence. This will invoke the Embedded Erase

Algorithm which is an

internal algorithm that automatically preprograms the array if it is not already programmed before executing the

erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell

margin.

This device also features a sector erase architecture. The sector erase mode allows for sectors of memory to

be erased and reprogrammed without affecting other sectors. A sector is typically erased and verified within one

second (if already completely preprogrammed). The MBM29F033C is erased when shipped from the factory.

The MBM29F033C device also features hardware sector group protection. This feature will disable both program

and erase operations in any combination of eight sector groups of memory.

A sector group consists of four

adjacent sectors grouped in the following pattern: sectors 0-3, 4-7, 8-11, 12-15, 16-19, 20-23, 24-27, 28-31, 32-

35, 36-39, 40-43, 44-47, 48-51, 52-55, 56-59, and 60-63.

Fujitsu has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of

time to read data from or program data to a non-busy sector. Thus, true background erase can be achieved.

The device features single 5.0 V power supply operation for both read and program functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low V

detector automatically

inhibits write operations during power transitions. The end of program or erase is detected by Data Polling of

, or by the Toggle Bit I feature on DQ

or RY/BY output pin. Once the end of a program or erase cycle has

been completed, the device automatically resets to the read mode.

The MBM29F033C also has a hardware RESET pin. When this pin is driven low, execution of any Embedded

Program or Embedded Erase operations will be terminated. The internal state machine will then be reset into

the read mode. The RESET pin may be tied to the system reset circuity. Therefore, if a system reset occurs

during the Embedded Program or Embedded Erase operation, the device will be automatically reset to a read

mode. This will enable the system microprocessor to read the boot-up firmware from the Flash memory.

Fujitsu's Flash technology combines years of EPROM and E

PROM experience to produce the highest levels

of quality, reliability, and cost effectiveness. The MBM29F033C memory electrically erases all bits within a sector

simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM

programming mechanism of hot electron injection.

MBM29F033C-90 Related Products

	MBM29F033C-90	MBM29F033C-90PTN	MBM29F033C-70PTN	MBM29F033C-90PTR	MBM29F033C-70	MBM29F033C-12PTR	MBM29F033C-12PTN	MBM29F033C-70PTR	MBM29F033C-12	MBM29F033C
Description	32M (4M X 8) BIT	Flash, 4MX8, 90ns, PDSO40, TSOP1-40	Flash, 4MX8, 70ns, PDSO40, TSOP1-40	Flash, 4MX8, 90ns, PDSO40, REVERSE, TSOP1-40	32M (4M X 8) BIT	Flash, 4MX8, 120ns, PDSO40, REVERSE, TSOP1-40	Flash, 4MX8, 120ns, PDSO40, TSOP1-40	32M (4M X 8) BIT	32M (4M X 8) BIT	32M (4M X 8) BIT
Parts packaging code	-	TSOP1	TSOP1	TSOP1	-	TSOP1	TSOP1	TSOP1	-	-
package instruction	-	TSOP1-40	TSOP1-40	REVERSE, TSOP1-40	-	REVERSE, TSOP1-40	TSOP1-40	TSOP1-R, TSSOP40,.8,20	-	-
Contacts	-	40	40	40	-	40	40	40	-	-
Reach Compliance Code	-	unknown	unknown	unknown	-	unknown	unknown	unknow	-	-
ECCN code	-	EAR99	EAR99	EAR99	-	EAR99	EAR99	3A991.B.1.A	-	-
Maximum access time	-	90 ns	70 ns	90 ns	-	120 ns	120 ns	70 ns	-	-
JESD-30 code	-	R-PDSO-G40	R-PDSO-G40	R-PDSO-G40	-	R-PDSO-G40	R-PDSO-G40	R-PDSO-G40	-	-
length	-	18.4 mm	18.4 mm	18.4 mm	-	18.4 mm	18.4 mm	18.4 mm	-	-
memory density	-	33554432 bit	33554432 bit	33554432 bit	-	33554432 bit	33554432 bit	33554432 bi	-	-
Memory IC Type	-	FLASH	FLASH	FLASH	-	FLASH	FLASH	FLASH	-	-
memory width	-	8	8	8	-	8	8	8	-	-
Number of functions	-	1	1	1	-	1	1	1	-	-
Number of terminals	-	40	40	40	-	40	40	40	-	-
word count	-	4194304 words	4194304 words	4194304 words	-	4194304 words	4194304 words	4194304 words	-	-
character code	-	4000000	4000000	4000000	-	4000000	4000000	4000000	-	-
Operating mode	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	-
Maximum operating temperature	-	85 °C	70 °C	85 °C	-	85 °C	85 °C	70 °C	-	-
Minimum operating temperature	-	-40 °C	-20 °C	-40 °C	-	-40 °C	-40 °C	-20 °C	-	-
organize	-	4MX8	4MX8	4MX8	-	4MX8	4MX8	4MX8	-	-
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
encapsulated code	-	TSOP1	TSOP1	TSOP1-R	-	TSOP1-R	TSOP1	TSOP1-R	-	-
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
Package form	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	-	-
Parallel/Serial	-	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	-	-
Programming voltage	-	5 V	5 V	5 V	-	5 V	5 V	5 V	-	-
Certification status	-	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	-	-
Maximum seat height	-	1.2 mm	1.2 mm	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm	-	-
Maximum supply voltage (Vsup)	-	5.5 V	5.25 V	5.5 V	-	5.5 V	5.5 V	5.25 V	-	-
Minimum supply voltage (Vsup)	-	4.5 V	4.75 V	4.5 V	-	4.5 V	4.5 V	4.75 V	-	-
Nominal supply voltage (Vsup)	-	5 V	5 V	5 V	-	5 V	5 V	5 V	-	-
surface mount	-	YES	YES	YES	-	YES	YES	YES	-	-
technology	-	CMOS	CMOS	CMOS	-	CMOS	CMOS	CMOS	-	-
Temperature level	-	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	-	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	-	-
Terminal form	-	GULL WING	GULL WING	GULL WING	-	GULL WING	GULL WING	GULL WING	-	-
Terminal pitch	-	0.5 mm	0.5 mm	0.5 mm	-	0.5 mm	0.5 mm	0.5 mm	-	-
Terminal location	-	DUAL	DUAL	DUAL	-	DUAL	DUAL	DUAL	-	-
type	-	NOR TYPE	NOR TYPE	NOR TYPE	-	NOR TYPE	NOR TYPE	NOR TYPE	-	-
width	-	10 mm	10 mm	10 mm	-	10 mm	10 mm	10 mm	-	-

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