LESHAN RADIO COMPANY, LTD.
Dual SCHOTTKY Barrier Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT–363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small six–
leaded package. The SOT–363 is ideal for low–power surface mount
applications where board space is at a premium, such as portable
products.
Surface Mount Comparisons:
Area (mm )
Max Package P
D
(mW)
Device Count
2
MBD110DWT1
MBD330DWT1
MBD770DWT1
6
5
4
SOT–363
4.6
120
2
SOT–23
7.6
225
1
1
2
3
SOT–363
CASE 419B–01, STYLE 6
Space Savings:
Package
SOT–363
1 × SOT–23
40%
2 × SOT–23
70%
Cathode
6
N/C
5
Anode
4
The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular
MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed
for high–efficiency UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
1
Anode
2
N/C
3
Cathode
MAXIMUM RATINGS
Rating
Reverse Voltage
MBD110DWT1
MBD330DWT1
MBD770DWT1
Forward Power Dissipation
T
A
= 25°C
Junction Temperature
Storage Temperature Range
P
F
T
J
T
stg
Symbol
V
R
Value
7.0
30
70
120
–55 to +125
–55 to +150
Unit
Vdc
mW
°C
°C
DEVICE MARKING
MBD110DWT1 = M4
MBD330DWT1 = T4
MBD770DWT1 = H5
Thermal Clad is a trademark of the Bergquist Company.
MBD110–1/5
LESHAN RADIO COMPANY, LTD.
MBD110DWT1 MBD330DWT1 MBD770DWT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
µA)
MBD110DWT1
MBD330DWT1
MBD770DWT1
C
T
MBD110DWT1
C
T
MBD330DWT1
MBD770DWT1
I
R
MBD110DWT1
MBD330DWT1
MBD770DWT1
NF
MBD110DWT1
V
F
MBD110DWT1
MBD330DWT1
MBD770DWT1
—
—
—
—
—
0.5
0.38
0.52
0.42
0.7
0.6
0.45
0.6
0.5
1.0
—
6.0
—
Vdc
—
—
—
0.02
13
9.0
0.25
200
200
µA
nAdc
nAdc
dB
—
—
0.9
0.5
1.5
1.0
—
0.88
1.0
pF
Symbol
V
(BR)R
7.0
30
70
10
—
—
—
—
—
pF
Min
Typ
Max
Unit
Volts
Diode Capacitance
(V
R
= 0, f = 1.0 MHz, Note 1)
Total Capacitance
(V
R
= 15 Volts, f = 1.0 MHz)
(V
R
= 20 Volts, f = 1.0 MHz)
Reverse Leakage
(V
R
= 3.0 V)
(V
R
= 25 V)
(V
R
= 35 V)
Noise Figure
(f = 1.0 GHz, Note 2)
Forward Voltage
(I
F
= 10 mA)
(I
F
= 1.0 mAdc)
(I
F
= 10 mA)
(I
F
= 1.0 mAdc)
(I
F
= 10 mA)
MBD110–2/5
LESHAN RADIO COMPANY, LTD.
MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS — MBD110DWT1
1.0
0.7
0.5
100
0.2
I
F
, FORWARD CURRENT (mA)
40
50
60
70
80
90
100
110
120
130
I
R
, REVERSE LEAKAGE (µ A)
10
0.1
0.07
0.05
1.0
0.02
0.01
30
0.1
0.3
0.4
0.5
0.6
0.7
0.8
T
A
, AMBIENT TEMPERATURE (°C)
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 1. Reverse Leakage
Figure 2. Forward Voltage
1.0
11
10
9
C, CAPACITANCE (pF)
0.9
NF, NOISE FIGURE (dB)
8
7
6
5
4
3
2
1
0.8
0.7
0.6
0
1.0
2.0
3.0
4.0
0.1
0.2
0.5
1.0
2.0
5.0
10
V
R
, REVERSE VOLTAGE (VOLTS)
P
LO
, LOCAL OSCILLATOR POWER (mW)
Figure 3. Capacitance
Figure 4. Noise Figure
NOTES ON TESTING AND SPECIFICATIONS
Note 1 – C
C
and C
T
are measured using a capaci-
tance bridge (Boonton Electronics Model 75A
or equivalent).
Note 2 – Noise figure measured with diode under
test in tuned diode mount using UHF noise
source and local oscillator (LO) frequency of
1.0 GHz. The LO power is adjusted for 1.0
mW. I
F
amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 – L
S
is measured on a package having a
Figure 5. Noise Figure Test Circuit
short instead of a die, using an impedance
bridge (Boonton Radio Model 250A RX Meter).
MBD110–3/5
LESHAN RADIO COMPANY, LTD.
MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS MBD330DWT1
2.4
2.0
1.6
1.2
0.8
0.4
0
0
τ
, MINORITY CARRIER LIFETIME (ps)
3.0
6.0
9.0
12
15
18
21
24
27
30
2.8
500
C
T
, TOTAL CAPACITANCE (pF)
400
300
200
100
0
0
10
20
30
40
50
60
70
80
90
100
V
R
, REVERSE VOLTAGE (VOLTS)
I
F
, FORWARD CURRENT (mA)
Figure 6. Total Capacitance
Figure 7. Minority Carrier Lifetime
10
100
I
R
, REVERSE LEAKAGE (µA)
1.0
I
F
, FORWARD CURRENT (mA)
10
0.1
1.0
0.01
0.001
0
0.1
6.0
12
18
24
30
0.2
0.4
0.6
0.8
1.0
1.2
V
R
, REVERSE VOLTAGE (VOLTS)
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 8. Reverse Leakage
Figure 9. Forward Voltage
MBD110–4/5
LESHAN RADIO COMPANY, LTD.
MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS MBD770DWT1
1.6
τ
, MINORITY CARRIER LIFETIME (ps)
5.0
10
15
20
25
30
35
40
45
50
2.0
500
C
T
, TOTAL CAPACITANCE (pF)
400
1.2
300
0.8
200
0.4
100
0
0
0
0
10
20
30
40
50
60
70
80
90
100
V
R
, REVERSE VOLTAGE (VOLTS)
I
F
, FORWARD CURRENT (mA)
Figure 10 . Total Capacitance
Figure 11. Minority Carrier Lifetime
10
100
I
R
, REVERSE LEAKAGE (µA)
1.0
I
F
, FORWARD CURRENT (mA)
10
0.1
1.0
0.01
0.001
0
0.1
10
20
30
40
50
0.2
0.4
0.8
1.2
1.6
2.0
V
R
, REVERSE VOLTAGE (VOLTS)
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 12. Reverse Leakage
Figure 13. Forward Voltage
MBD110–5/5
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