HS1-6254RH-Q datasheet, PDF - EEWORLD Datasheet

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HS1-6254RH-Q: Description5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERDIP-16; CategoryDiscrete semiconductor The transistor; File Size31KB，3 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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HS1-6254RH-Q Overview

5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERDIP-16

HS1-6254RH-Q Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Parts packaging code	DIP
package instruction	IN-LINE, R-GDIP-T16
Contacts	16
Reach Compliance Code	not_compliant
Other features	HIGH RELIABILITY
Configuration	SEPARATE, 5 ELEMENTS
JESD-30 code	R-GDIP-T16
JESD-609 code	e0
Number of components	5
Number of terminals	16
Package body material	CERAMIC, GLASS-SEALED
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
Guideline	MILITARY STANDARD (USA)
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	8000 MHz
Base Number Matches	1

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HS-6254RH

Data Sheet

August 1999

File Number

4425.2

Radiation Hardened Ultra High Frequency

NPN Transistor Array

The HS-6254RH is a Radiation Hardened array of ﬁve NPN

transistors on a common substrate. One of our bonded

wafer, dielectrically isolated fabrication processes provides

an immunity to Single Event Latch-up and the capability of

highly reliable performance in any radiation environment.

The high F

(8GHz) and low noise ﬁgure (3.5dB) of these

transistors make them ideal for use in high frequency

ampliﬁer and mixer applications. Monolithic construction of

the ﬁve transistors provides the closest electrical and

thermal matching possible. Access is provided to each

terminal of the transistors for maximum application ﬂexibility.

Speciﬁcations for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed here must be used when ordering.

Detailed Electrical Speciﬁcations for these devices are

contained in SMD 5962-97641. A “hot-link” is provided

on our homepage for downloading.

www.intersil.com/spacedefense/space.asp

Features

• Electrically Screened to SMD # 5962-97641

• QML Qualiﬁed per MIL-PRF-38535 Requirements

• Radiation Environment

- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 10

RAD(Si)

- SEL Immune . . . . . . . Bonded Wafer Dielectric Isolation

• Gain Bandwidth Product (F

) . . . . . . . . . . . . . .8GHz (Typ)

• Current Gain (h

) . . . . . . . . . . . . . . . . . . . . . . . . 70 (Typ)

• Early Voltage (V

). . . . . . . . . . . . . . . . . . . . . . . . 50V (Typ)

• Noise Figure (50Ω) at 1GHz. . . . . . . . . . . . . . .3.5dB (Typ)

• Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)

Applications

• High Frequency Ampliﬁers and Mixers

- Refer to Application Note 9315

• High Frequency Converters

• Synchronous Detectors

Pinouts

HS1-6254RH (CERDIP) GDIP1-T16 OR

HS1-6254RH (SBDIP) CDIP2-T16

TOP VIEW

Q1C 1

Q2C 2

Q2E 3

Q2B 4

NC 5

Q3C 6

Q3E 7

Q3B 8

16 Q1E

15 Q1B

14 Q5B

13 Q5E

12 Q5C

11 Q4C

10 Q4E

9 Q4B

Ordering Information

ORDERING NUMBER

HS0-6254RH-Q

5962F9764101VEA

5962F9764101VEC

5962F9764101VXC

HS1-6254RH/SAMPLE

INTERNAL

MKT. NUMBER

HS0-6254RH-Q

HS1-6254RH-Q

HS1B-6254RH-Q

HS9-6254RH-Q

HS1-6254RH/SAMPLE

TEMP. RANGE

(

-55 to 125

HS9-6254RH (FLATPACK) CDFP4-F16

TOP VIEW

Q1C

Q2C

Q2E

Q2B

Q3C

Q3E

Q3B

Q1E

Q1B

Q5B

Q5E

Q5C

Q4C

Q4E

Q4B

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

HS1-6254RH-Q Related Products

	HS1-6254RH-Q	HS9-6254RH-Q	HS0-6254RH-Q	HS1-6254RH/SAMPLE
Description	5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERDIP-16	5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16	5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16	5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERDIP-16
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation
Parts packaging code	DIP	DFP	DIE	DIP
package instruction	IN-LINE, R-GDIP-T16	FLATPACK, R-CDFP-F16	UNCASED CHIP, R-XUUC-N16	IN-LINE, R-GDIP-T16
Contacts	16	16	16	16
Reach Compliance Code	not_compliant	not_compliant	not_compliant	unknown
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Configuration	SEPARATE, 5 ELEMENTS	SEPARATE, 5 ELEMENTS	SEPARATE, 5 ELEMENTS	SEPARATE, 5 ELEMENTS
JESD-30 code	R-GDIP-T16	R-CDFP-F16	R-XUUC-N16	R-GDIP-T16
Number of components	5	5	5	5
Number of terminals	16	16	16	16
Package body material	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	CERAMIC, GLASS-SEALED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	FLATPACK	UNCASED CHIP	IN-LINE
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	YES	NO
Terminal form	THROUGH-HOLE	FLAT	NO LEAD	THROUGH-HOLE
Terminal location	DUAL	DUAL	UPPER	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	8000 MHz	8000 MHz	8000 MHz	8000 MHz
Is it Rohs certified?	incompatible	incompatible	incompatible	-
JESD-609 code	e0	e0	e3	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Guideline	MILITARY STANDARD (USA)	MILITARY STANDARD (USA)	-	MIL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	MATTE TIN	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Base Number Matches	1	1	1	-

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