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3KP11C-GT3

Description
Trans Voltage Suppressor Diode, 3000W, 11V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size225KB,5 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

3KP11C-GT3 Overview

Trans Voltage Suppressor Diode, 3000W, 11V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, 2 PIN

3KP11C-GT3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Maximum breakdown voltage15.4 V
Minimum breakdown voltage12.2 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation8 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage11 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1




  


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