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F4H3P-4062

Description
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.21ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
CategoryDiscrete semiconductor    The transistor   
File Size70KB,1 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Download Datasheet Parametric View All

F4H3P-4062 Overview

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.21ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

F4H3P-4062 Parametric

Parameter NameAttribute value
MakerSHINDENGEN
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)3.5 A
Maximum drain-source on-resistance0.21 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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