5962R0520802VXC datasheet, PDF

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5962R0520802VXC: DescriptionStandard SRAM, 512KX8, 15ns, CMOS; Categorystorage storage; File Size350KB，14 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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5962R0520802VXC Overview

Standard SRAM, 512KX8, 15ns, CMOS

5962R0520802VXC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	DFP, FL36,.5
Reach Compliance Code	not_compliant
ECCN code	3A001.A.2.C
Maximum access time	15 ns
I/O type	COMMON
JESD-30 code	R-XDFP-F36
JESD-609 code	e4
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	36
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DFP
Encapsulate equivalent code	FL36,.5
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
power supply	3.3 V
Certification status	Qualified
Filter level	MIL-PRF-38535 Class V
Maximum seat height	3.05 mm
Maximum standby current	0.0015 A
Minimum standby current	2 V
Maximum slew rate	0.18 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
total dose	300k Rad(Si) V
width	12.195 mm
Base Number Matches	1

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Features

•

Operating Voltage: 3.3V

•

Access Time:

•

– 15 ns (AT60142F)

Very Low Power Consumption

– Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns

– Standby: 3.3 mW (Typ)

Wide Temperature Range: -55 to +125°C

TTL-Compatible Inputs and Outputs

Asynchronous

Designed on 0.25 µm Radiation Hardened Process

No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm

@125°C

Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019

500 Mils Wide FP36 Package

ESD Better than 4000V

Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208

Description

The AT60142F is a very low power CMOS static RAM organized as 524 288 x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

Utilizing an array of six transistors (6T) memory cells, the AT60142F combines an

extremely low standby supply current (Typical value = 1 mA) with a fast access time at

15 ns or better over the full military temperature range. The high stability of the 6T cell

provides excellent protection against soft errors due to noise.

The AT60142F is processed according to the methods of the latest revision of the MIL

PRF 38535 or ESCC 9000.

It is produced on a radiation hardened 0.25 µm CMOS process.

Rad Hard

512K x 8

Very Low Power

CMOS SRAM

AT60142F

4408H–AERO–05/10

5962R0520802VXC Related Products

	5962R0520802VXC	5962-0520802VYC	5962-0520802QYC	5962-0520802QXC	5962R0520802VYC	5962-0520802VXC	AT60142F-DD15MSV	AT60142F-DS15M-E
Description	Standard SRAM, 512KX8, 15ns, CMOS	Standard SRAM, 512KX8, 15ns, CMOS	Standard SRAM, 512KX8, 15ns, CMOS	Standard SRAM, 512KX8, 15ns, CMOS	Standard SRAM, 512KX8, 15ns, CMOS	Standard SRAM, 512KX8, 15ns, CMOS	Standard SRAM, 512KX8, 15ns, CMOS	Standard SRAM, 512KX8, 15ns, CMOS
package instruction	DFP, FL36,.5	DFP, FL36,.5	DFP, FL36,.5	DFP, FL36,.5	DFP, FL36,.5	0.500 INCH, DFP-36	DIE,	DFP,
Reach Compliance Code	not_compliant	compliant	compliant	unknown	compliant	unknown	compliant	compliant
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	15 ns	15 ns	15 ns	15 ns	15 ns	15 ns	15 ns	15 ns
JESD-30 code	R-XDFP-F36	R-XDFP-F36	R-XDFP-F36	R-XDFP-F36	R-XDFP-F36	R-XDFP-F36	X-XUUC-N	R-XDFP-F36
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DFP	DFP	DFP	DFP	DFP	DFP	DIE	DFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	UNSPECIFIED	RECTANGULAR
Package form	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	UNCASED CHIP	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	NO LEAD	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	UPPER	DUAL
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	-	-
JESD-609 code	e4	e4	e4	e4	e4	e4	-	-
Number of terminals	36	36	36	36	36	36	-	36
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	-
Encapsulate equivalent code	FL36,.5	FL36,.5	FL36,.5	FL36,.5	FL36,.5	FL36,.5	-	-
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-	-
Filter level	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-STD-883 Class V	-
Maximum seat height	3.05 mm	3.05 mm	3.05 mm	3.05 mm	3.05 mm	3.05 mm	-	3.05 mm
Maximum standby current	0.0015 A	0.0015 A	0.0015 A	0.0015 A	0.0015 A	0.0015 A	-	-
Minimum standby current	2 V	2 V	2 V	2 V	2 V	2 V	-	-
Maximum slew rate	0.18 mA	0.18 mA	0.18 mA	0.18 mA	0.18 mA	0.18 mA	-	-
Terminal surface	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	-	-
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	-	1.27 mm
width	12.195 mm	12.195 mm	12.195 mm	12.195 mm	12.195 mm	12.195 mm	-	12.195 mm
Base Number Matches	1	1	1	1	1	1	1	-
Maker	-	Microchip	Microchip	Microchip	Microchip	Microchip	-	Microchip

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