GigaMOS
TM
TrenchT2
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK360N15T2
IXFX360N15T2
R
DS(on)
t
rr
TO-264 (IXFK)
V
DSS
I
D25
=
=
150V
360A
4.0m
150ns
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
L(RMS)
I
DM
I
A
E
AS
P
D
dV/dt
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25C to 175C
T
J
= 25C to 175C, R
GS
= 1M
Continuous
Transient
T
C
= 25C (Chip Capability)
External Lead Current Limit
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
175°C
Maximum Ratings
150
150
20
30
360
160
900
100
TBD
1670
20
-55 ... +175
175
-55 ... +175
V
V
V
V
A
A
A
A
J
W
V/ns
C
C
C
°C
°C
Nm/lb.in.
N/lb.
g
g
G
D
S
Tab
PLUS247 (IXFX)
G
D
S
Tab
D = Drain
Tab = Drain
G = Gate
S = Source
Features
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
(PLUS247)
300
260
1.13/10
20..120 /4.5..27
10
6
International Standard Packages
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low R
DS(on)
Advantages
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= 10V, I
D
= 60A, Note 1
T
J
= 150C
Characteristic Values
Min.
Typ.
Max.
150
2.5
5.0
200
V
V
nA
Easy to Mount
Space Savings
High Power Density
Applications
50
A
5 mA
4.0 m
Synchronous Recification
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
© 2016 IXYS CORPORATION, All Rights Reserved
DS100181A(8/16)
IXFK360N15T2
IXFX360N15T2
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 100A
R
G
= 1 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 60A, Note 1
Characteristic Values
Min.
Typ.
Max.
140
230
47.5
3060
665
50
170
115
265
715
185
200
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.09C/W
0.15C/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Pins: 1 - Gate
2,4 - Drain
3 - Source
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
TO-264 (IXFK) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 60A, V
GS
= 0V, Note 1
I
F
= 160A, -di/dt = 100A/s
V
R
= 60V, V
GS
= 0V
0.50
9.00
Characteristic Values
Min.
Typ.
Max.
360
1440
1.2
150
A
A
V
ns
C
A
PLUS 247
TM
(IXFX) Outline
Note 1.
Pulse test, t
300s; duty cycle, d 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
6,404,065 B1
6,534,343
6,583,505
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
7,157,338B2
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXFK360N15T2
IXFX360N15T2
Fig. 1. Output Characteristics @ T
J
= 25ºC
350
300
250
V
GS
= 15V
10V
8V
7V
350
300
250
V
GS
= 10V
7V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
200
150
100
50
0
0.0
0.2
0.4
0.6
0.8
I
D
- Amperes
6V
200
150
100
50
4V
0
5V
5V
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 150ºC
350
300
250
V
GS
= 10V
8V
7V
3.0
2.6
2.2
Fig. 4. R
DS(on)
Normalized to I
D
= 180A Value vs.
Junction Temperature
V
GS
= 10V
I
D
- Amperes
6V
200
150
100
50
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4V
5V
R
DS(on)
- Normalized
I
D
= 360A
1.8
1.4
1.0
0.6
0.2
-50
-25
0
25
50
75
100
125
150
175
I
D
= 180A
V
DS
- Volts
T
J
- Degrees Centigrade
3.4
3.0
2.6
2.2
1.8
1.4
Fig. 5. R
DS(on)
Normalized to I
D
= 180A Value vs.
Drain Current
180
V
GS
= 10V
160
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
140
T
J
= 175ºC
R
DS(on)
- Normalized
120
I
D
- Amperes
T
J
= 25ºC
100
80
60
40
20
0
1.0
0.6
0
50
100
150
200
250
300
350
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved
IXFK360N15T2
IXFX360N15T2
Fig. 7. Input Admittance
200
180
160
140
T
J
= 150ºC
25ºC
- 40ºC
450
T
J
= - 40ºC
400
350
25ºC
Fig. 8. Transconductance
120
100
80
60
40
20
0
2.5
3.0
3.5
g
f s
- Siemens
I
D
- Amperes
300
250
200
150
100
50
0
150ºC
4.0
4.5
5.0
5.5
0
20
40
60
80
100
120
140
160
180
200
220
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350
300
8
250
7
10
9
V
DS
= 75V
I
D
= 180A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
200
150
T
J
= 150ºC
100
T
J
= 25ºC
50
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
GS
- Volts
6
5
4
3
2
1
0
0
100
200
300
400
500
600
700
800
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1000
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
Limit
25µs
Ciss
Capacitance - PicoFarads
100
10,000
Coss
External Lead Limit
100µs
I
D
- Amperes
10
1ms
1,000
1
Crss
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
0.1
0
5
10
15
20
25
30
35
40
1
10
100
10ms
100ms
DC
f
= 1 MHz
100
1,000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK360N15T2
IXFX360N15T2
340
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
300
R
G
= 1Ω , V
GS
= 10V
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
R
G
= 1Ω , V
GS
= 10V
260
V
DS
= 75V
300
V
DS
= 75V
t
r
- Nanoseconds
260
t
r
- Nanoseconds
I
D
= 100A
220
220
180
T
J
= 25ºC
T
J
= 125ºC
180
I
D
= 200A
140
140
100
100
25
35
45
55
65
75
85
95
105
115
125
60
40
60
80
100
120
140
160
180
200
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
700
210
700
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
220
t
r
600
500
400
300
200
100
0
1
2
3
V
DS
= 75V
t
d(on)
180
I
D
= 200A
150
120
90
60
30
0
4
5
6
7
8
9
10
600
500
t
f
V
DS
= 75V
t
d(off)
200
180
160
I
D
= 200A
I
D
= 100A
140
120
100
80
125
T
J
= 125ºC, V
GS
= 10V
R
G
= 1Ω, V
GS
= 10V
t
d(on)
- Nanoseconds
t
d(off)
- Nanoseconds
t
r
- Nanoseconds
t
f
- Nanoseconds
400
300
200
100
0
25
35
45
55
65
75
85
95
105
115
I
D
= 100A
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
700
600
500
400
300
200
T
J
= 25ºC
100
0
40
60
80
100
120
140
160
180
120
100
200
240
900
800
700
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
900
t
f
V
DS
= 75V
t
d(off)
R
G
= 1Ω, V
GS
= 10V
220
200
180
160
140
t
f
V
DS
= 75V
t
d(off)
800
700
T
J
= 125ºC, V
GS
= 10V
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
f
- Nanoseconds
600
500
400
300
200
100
1
2
3
I
D
= 200A, 100A
600
500
400
300
200
100
T
J
= 125ºC
4
5
6
7
8
9
10
I
D
- Amperes
R
G
- Ohms
© 2016 IXYS CORPORATION, All Rights Reserved
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