JANTXV2N3637L datasheet, PDF - EEWORLD Datasheet

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JANTXV2N3637L: Description1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5; CategoryDiscrete semiconductor The transistor; File Size49KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5

JANTXV2N3637L Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-5
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	175 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-5
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1 W
Certification status	Qualified
Guideline	MIL-19500/357H
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	650 ns
Maximum opening time (tons)	200 ns
Base Number Matches	1

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TECHNICAL DATA

PNP SILICON AMPLIFIER TRANSISTOR

Qualified per MIL-PRF-19500/357

Devices

2N3634

2N3634L

2N3635

2N3635L

2N3636

2N3636L

2N3637

2N3637L

Qualified Level

JAN

JANTX

JANTXV

JANS

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

Symbol

V

CEO

V

CBO

V

EBO

I

C

2N3634*

2N3635*

140

2N3636*

2N3637*

175

Unit

TO-39* (TO-205AD)

2N3634, 2N3635

2N3636, 2N3637

Vdc

5.0

Vdc

1.0

Adc

0 (1)

@ T

A

= +25 C

1.0

W

P

T

0 (2)

@ T

C

= +25 C

5.0

W

0

Operating & Storage Junction Temperature Range

-65 to +200

C

T

J

,

T

stg

*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices

1) Derate linearly 5.71 mW/

0

C for T

A

> +25

0

C

2) Derate linearly 28.6 mW/

0

C for T

C

> +25

0

C

TO-5*

2N3634, 2N3635

2N3636, 2N3637

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

I

C

= 10 mAdc

Collector-Base Cutoff Current

V

CB

= 100 Vdc

V

CB

= 140 Vdc

Emitter-Base Cutoff Current

V

EB

= 3.0 Vdc

V

EB

= 5.0 Vdc

Collector-Emitter Cutoff Current

V

CE

= 100 Vdc

2N3634, 2N3635

2N3636, 2N3637

V

(BR)

CEO

140

175

100

10

50

10

Vdc

ηAdc

µAdc

ηAdc

µAdc

I

CBO

2N3634, 2N3635

I

EBO

I

CEO

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

JANTXV2N3637L Related Products

	JANTXV2N3637L	JANTXV2N3634	JANTXV2N3635	JANTXV2N3636	JANTXV2N3637
Description	1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5	Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN	1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD	Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-5	BCY	BCY	BCY	BCY
package instruction	CYLINDRICAL, O-MBCY-W3	TO-39, 3 PIN	TO-39, 3 PIN	TO-39, 3 PIN	CYLINDRICAL, O-MBCY-W3
Contacts	3	2	2	2	2
Reach Compliance Code	compli	unknown	unknown	unknow	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	175 V	140 V	140 V	175 V	175 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	60	30	60	30	60
JEDEC-95 code	TO-5	TO-39	TO-39	TO-39	TO-39
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	200 °C	175 °C	175 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	1 W	1 W	1 W	1 W	1 W
Certification status	Qualified	Not Qualified	Qualified	Qualified	Qualified
Guideline	MIL-19500/357H	MIL-19500/357H	MIL-19500/357H	MIL-19500/357H	MIL-19500/357H
surface mount	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)	TIN LEAD
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	650 ns	650 ns	650 ns	650 ns	650 ns
Maximum opening time (tons)	200 ns	200 ns	200 ns	200 ns	200 ns
Objectid	-	2078586664	2078586673	-	2078586691
Nominal transition frequency (fT)	-	150 MHz	200 MHz	150 MHz	200 MHz

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