MB256W datasheet, PDF - EEWORLD Datasheet

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MB256W: Description25 A, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size78KB，2 Pages; ManufacturerBytes

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MB256W Overview

25 A, SILICON, BRIDGE RECTIFIER DIODE

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MB2505W

THRU

MB2510W

SINGLE PHASE 25 AMP BRIDGE RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

25.0 Amperes

MB-25W

.452

MAX.

(11.5)

FEATURES

* Superior thermal design

* 300 amperes surge capability

* Mounting: Hole thru for #8 screw

.042(1.1)

DIA.

.039(1.0)

TYP.

.591

MIN.

(15.0)

1.181(30.0)

1.102(28.0)

.673(17.1)

.633(16.1)

HOLE FOR

NO. 8 SCREW

.732(18.6)

.692(17.6)

.468(11.9)

.429(10.9)

1.181(30.0)

1.102(28.0)

.732(18.6)

.692(17.6)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Tc=55 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage Drop per Bridge Element at 12.5AD.C.

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Operating Temperature Range, T

Storage Temperature Range, T

STG

Ta=100 C

MB2505W MB251W

MB252W

MB254W MB256W

MB258W MB2510W

100

200

140

200

400

280

400

300

1.1

500

-65 +125

-65 +150

600

420

600

800

560

800

UNITS

1000

700

1000

µA

182

MB256W Related Products

	MB256W	MB258W	MB254W	MB252W	MB251W	MB2510W	MB2505W
Description	25 A, SILICON, BRIDGE RECTIFIER DIODE	25 A, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	25 A, SILICON, BRIDGE RECTIFIER DIODE	25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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