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MB251W

Description
25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size78KB,2 Pages
ManufacturerBytes
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MB251W Overview

25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

MB2505W
THRU
MB2510W
SINGLE PHASE 25 AMP BRIDGE RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
25.0 Amperes
MB-25W
.452
MAX.
(11.5)
FEATURES
* Superior thermal design
* 300 amperes surge capability
* Mounting: Hole thru for #8 screw
.042(1.1)
DIA.
.039(1.0)
TYP.
.591
MIN.
(15.0)
1.181(30.0)
1.102(28.0)
.673(17.1)
.633(16.1)
HOLE FOR
NO. 8 SCREW
AC
.732(18.6)
.692(17.6)
+
AC
.468(11.9)
.429(10.9)
1.181(30.0)
1.102(28.0)
.732(18.6)
.692(17.6)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Tc=55 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage Drop per Bridge Element at 12.5AD.C.
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Operating Temperature Range, T
J
Storage Temperature Range, T
STG
Ta=100 C
MB2505W MB251W
MB252W
MB254W MB256W
MB258W MB2510W
50
35
50
100
70
100
200
140
200
400
280
400
25
300
1.1
10
500
-65 +125
-65 +150
600
420
600
800
560
800
UNITS
1000
V
700
V
1000
V
A
A
V
µA
µA
C
C
182

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MB251W MB258W MB256W MB254W MB252W MB2510W MB2505W
Description 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, SILICON, BRIDGE RECTIFIER DIODE 25 A, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 25 A, SILICON, BRIDGE RECTIFIER DIODE 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
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